Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ninggang Dong"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:1507-1512
The existing gate-stack small-signal models of metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) were analyzed, and a new model that could fit the measured admittance characteristics in the whole bias regime after learn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292735cb881477b31e37ccdfb8c2417d
https://doi.org/10.1109/ted.2021.3057019
https://doi.org/10.1109/ted.2021.3057019
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
A novel approach for dual-metal-gate AlGaN/GaN HEMT on Si substrate for high-voltage power switching applications is reported. Compared with traditional dual-gate structure combined MIS gate and Schottky gate, we demonstrate dual-metal-gate with diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf05ac9a0510cd327ac6612fe4f7c51
https://doi.org/10.1109/icsict.2018.8565730
https://doi.org/10.1109/icsict.2018.8565730
Publikováno v:
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC).
In this paper, a novel normally-off p-GaN gate AlGaN/GaN HEMT on AlGaN buffer with an InGaN layer inserted between GaN channel and AlGaN buffer is proposed and investigated by Sentaurus TCAD simulation tool. A higher drain current (lower $\mathrm {R}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13f9bd0baad76397144dd5bf0e22aa5
https://doi.org/10.1109/edssc.2018.8487132
https://doi.org/10.1109/edssc.2018.8487132