Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Ningde Xie"'
Autor:
Ningde Xie1, Khan, Jawad1
Publikováno v:
Intel Technology Journal. 2013, Vol. 17 Issue 1, p94-101. 8p. 2 Diagrams, 2 Graphs.
Publikováno v:
ACM Transactions on Design Automation of Electronic Systems. 18:1-22
This article presents a cross-layer codesign approach to reduce SSD read response latency. The key is to cohesively exploit the NAND flash memory device write speed vs. raw storage reliability trade-off at the physical layer and runtime data access w
Enabling NAND Flash Memory Use Soft-Decision Error Correction Codes at Minimal Read Latency Overhead
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 60:2412-2421
With the aggressive technology scaling and use of multi-bit per cell storage, NAND flash memory is subject to continuous degradation of raw storage reliability and demands more and more powerful error correction codes (ECC). This inevitable trend mak
Publikováno v:
IEEE Transactions on Magnetics. 49:4761-4767
With the distinct advantage of retaining conventional head and media, the emerging shingled recording technology improves areal storage density through intentional track overlapping that nevertheless introduces severe intertrack interference (ITI). A
Publikováno v:
IEEE Transactions on Computers. 62:1051-1057
Future flash-based solid-state drives (SSDs) must employ increasingly powerful error correction code (ECC) and digital signal processing (DSP) techniques to compensate the negative impact of technology scaling on NAND flash memory device reliability.
Autor:
Qi Wu, Yiran Li, Kalyana Sundaram Venkataraman, Hongbin Sun, Tong Zhang, Nanning Zheng, Ningde Xie
Publikováno v:
Journal of Signal Processing Systems. 73:11-24
This paper studies the feasibility and potential of using planar embedded DRAM (eDRAM), which is completely compatible with CMOS logic process, to improve circuit implementation efficiency of memory-hungry signal processing algorithms. In spite of it
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 20:1705-1714
Today and future NAND flash memory will heavily rely on system-level fault-tolerance techniques such as error correction code (ECC) to ensure the overall system storage integrity. Since ECC demands the storage of coding redundancy and hence degrades
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 58:429-439
As technology continues to scale down, NAND Flash memory has been increasingly relying on error-correction codes (ECCs) to ensure the overall data storage integrity. Although advanced ECCs such as low-density parity-check (LDPC) codes can provide sig
Publikováno v:
IEEE Transactions on Magnetics. 46:933-941
We report on the use of low-density parity check (LDPC)-centric error correction coding (ECC) for magnetic recording read channel in the presence of significant burst errors. Since an LDPC code by itself is severely vulnerable to burst errors due to
Publikováno v:
IEEE Transactions on Magnetics. 46:87-91
Although the performance of a magnetic recording read channel can be improved by employing advanced iterative signal detection and coding techniques, the method nevertheless tends to incur significant silicon area and energy consumption overhead. Mot