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Publikováno v:
Jin'gangshi yu moliao moju gongcheng, Vol 42, Iss 6, Pp 720-727 (2022)
Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects. Micro-cracks, scratc
Externí odkaz:
https://doaj.org/article/2b3052fa92104c44bb84a8132582db56
