Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ning, Yonggong"'
Publikováno v:
Vacuum. 65:133-136
The quantum efficiency of PtSi infrared detector is restricted by PtSi film thickness. A new approach to the formation of ultra-thin PtSi film is introduced in this article. Based on solid phase reaction theory, an ultra-thin PtSi film of thickness 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed2b74cd8517243574bc7442faf2f4b
https://doi.org/10.1016/s0042-207x(01)00419-5
https://doi.org/10.1016/s0042-207x(01)00419-5
Publikováno v:
Ferroelectrics. 259:73-78
In this paper, the color band in BGO crystal, as accurately undeterminable defect by normal composition and structure analysis, has been analyzed by XRD and its computer simulation, introduction preparation of samples, XRD analysis and step of simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db8b57f3ead847e173c1ec4cf103b26
https://doi.org/10.1080/00150190108008719
https://doi.org/10.1080/00150190108008719
Autor:
Liu Shuang, Li Kun, Chen Ai, Zhang Yi, Ning Yonggong, Yang Jia-De, Liu Jun-Gang, Zhang Huai-wu
Publikováno v:
Acta Physica Sinica. 50:1447
Based on X-ray photoelectron spectrum intensity measurements of thin film by ARXPS, a method of determination of the thickness of PtSi ultra-thin films through calculations of electrom mean free path, is described in this article.The result of calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba9cfbf185ee71bba708582719398fe6
https://doi.org/10.7498/aps.50.1447
https://doi.org/10.7498/aps.50.1447
Publikováno v:
Surface & Interface Analysis: SIA; 1996, Vol. 24 Issue 9, p667-670, 4p
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