Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Ning, T.H."'
Publikováno v:
2007 IEEE International Electron Devices Meeting; 2007, p907-910, 4p
Autor:
Tianhing Chen, Bellini, M., Zhao, E., Comeau, J.P., Sutton, A.K., Grens, C.M., Cressler, J.D., Jin Cai, Ning, T.H.
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2005; 2005, p256-259, 4p
Autor:
Ning, T.H.
Publikováno v:
Proceedings of the 10th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2003); 2003, p1-4, 4p
Autor:
Ning, T.H.
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p5-8, 4p
Autor:
Ning, T.H.
Publikováno v:
2003 International Symposium on VLSI Technology, Systems & Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672); 2003, p121-124, 4p
Autor:
Ning, T.H.
Publikováno v:
2000 IEEE International Reliability Physics Symposium Proceedings 38th Annual (Cat. No.00CH37059); 2000, p1-6, 6p
Autor:
Ning, T.H.
Publikováno v:
Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044); 2000, p49-56, 8p
Publikováno v:
International Technical Digest on Electron Devices Meeting; 1989, p75-78, 4p
Publikováno v:
International Technical Digest on Electron Devices Meeting; 1989, p765-768, 4p
Autor:
Shahidi, G., Davari, B., Taur, Y., Warnock, J., Wordeman, M.R., McFarland, P., Mader, S., Rodriguez, M., Assenza, R., Bronner, G., Ginsberg, B., Lii, T., Polcari, M., Ning, T.H.
Publikováno v:
International Technical Digest on Electron Devices; 1990, p587-590, 4p