Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nina Khuchua"'
Autor:
Tatiana Sakharova, Lado Jibuti, Revaz G. Melkadze, Zurab Jibuti, Michael Heuken, Nina Khuchua, Marina Tigishvili, Nugzar Dolidze
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-6
A new technique is proposed, verified, and described for measuring photosensitivity spectra of semiconductor materials and devices in the wavelength range of 200–4100 nm utilizing an innovative setup termed “Polychromator” with a system of cut-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0cf38a6402553b5d8f169418a8ac39
https://doi.org/10.1109/tim.2020.3021109
https://doi.org/10.1109/tim.2020.3021109
Autor:
Nina Khuchua
Since the 1970s, the Black Sea has been suffering a severe pollution from excessive input of nutrients and chemicals. To improve the situation, the Convention on the Protection of the Black Sea Against Pollution (Bucharest Convention) was signed in 1
Autor:
Marina Tigishvili, Nodar Gapishvili, Galina Davbeshko, V. Romanyuk, Nugzar Dolidze, Revaz G. Melkadze, Nina Khuchua, Zurab Jibuti
Publikováno v:
Solid State Phenomena. 242:374-379
For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bae1199d9955971f8b7655c6c23d9c0
https://doi.org/10.4028/www.scientific.net/ssp.242.374
https://doi.org/10.4028/www.scientific.net/ssp.242.374
Autor:
NIKOLAI B. GOREV, INNA F. KODZHESPIROVA, EVGENY N. PRIVALOV, NINA KHUCHUA, LEVAN KHVEDELIDZE, MICHAEL S. SHUR
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:189-192
The results of calculations of the low-frequency and the high-frequency barrier capacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps in the AlGaAs layer are presented. The calculations are done for the samples in the da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4595814d126927ea9baac14128ed647
https://doi.org/10.1142/s0129156407004412
https://doi.org/10.1142/s0129156407004412
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Concentrated photovoltaic (CPV) is an important player in R&D and industrial technologies for cost-effective large-scale power plants. The developers' efforts are aimed at increasing the solar cell efficiency and improving optical concentrators to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ad300e4f30755daefa6434150d00f1
https://doi.org/10.1109/pvsc.2015.7355765
https://doi.org/10.1109/pvsc.2015.7355765
Autor:
Michael Shur, Evgeny N. Privalov, Inna F. Kodzhespirova, Nikolai B. Gorev, Levan Khvedelidze, Nina Khuchua
Publikováno v:
Solid-State Electronics. 49:343-349
A simple analytical model for calculating the high-frequency barrier capacitance of GaAs thin-film epitaxial structures both in the dark and under extrinsic illumination is presented. The model accounts for the space charge region at the film–subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c69670d28235664e6b2e0575f3a92e0
https://doi.org/10.1016/j.sse.2004.10.004
https://doi.org/10.1016/j.sse.2004.10.004
Autor:
Nina Khuchua, Nikolai B. Gorev, Evgeny N. Privalov, Michael Shur, G. Peradze, Kevin S. Stevens, Inna F. Kodzhespirova, Levan Khvedelidze
Publikováno v:
Solid-State Electronics. 47:1569-1575
A simple non-destructive method for determining the concentration of vacant deep traps in the vicinity of the film–substrate interface under extrinsic illumination is proposed and tested. The proposed technique relies on capacitance–voltage measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d3b75aa267ac7d743118f4de78419c2
https://doi.org/10.1016/s0038-1101(03)00079-0
https://doi.org/10.1016/s0038-1101(03)00079-0
Publikováno v:
Solid-State Electronics. 46:1463-1466
An analytical expression that describes the sidegating effect in a GaAs MESFET, (i.e. relates the drain current to the substrate voltage) is obtained. Based on this expression, a simple method for determining the concentration of vacant deep traps at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60365a18cae5313502de6341454828ab
https://doi.org/10.1016/s0038-1101(02)00060-6
https://doi.org/10.1016/s0038-1101(02)00060-6
Autor:
Tatiana Sakharova, Zurab Jibuti, G. Peradze, Nodar Gapishvili, Nina Khuchua, Nugzar Dolidze, Revaz G. Melkadze, Marina Tigishvili
Publikováno v:
physica status solidi c. 14:1700094
The optical and electrical characteristics of p–n photodiodes based on monocrystalline n-Si (wafers with ρ = 70 and 10 Ohm · cm and SOI) implanted with B+ in the dose range of 1 × 1014–1 × 1015 сm−2 and annealed at 900 °C (20 min) are stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918a04ae23514f4f85307c17407e4932
https://doi.org/10.1002/pssc.201700094
https://doi.org/10.1002/pssc.201700094