Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Nils-Peter Harder"'
Autor:
Florakis, Antonios, Bourarach, Fadi, Houzay, Erwann, Nils-Peter Harder, Smaine, Issam, Poquet, Arthur, Buzy-Debat, Alexandre, Soufiane Ait-Tilat, Chapon, Julien, Biver, Pierre, Chugonova, Tatiana, Arttu Tuomiranta, Poulain, Gilles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd2b2a330014a4ce80f60d8625342d52
Autor:
Siming Chen, Arthur Onno, Nils Peter Harder, Yuriy I. Mazur, Mourad Benamara, Gregory J. Salamo, Mingchu Tang, Huiyun Liu, Qi Jiang, Jiang Wu, Lars Oberbeck, Yurii Maidaniuk
Publikováno v:
Energy Procedia. 92:661-668
Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates by Molecular Beam Epitaxy. Due to the 4% lattice mismatch between AlGaAs and Si, Threading Dislocations (TDs) nucleate at the III-V/Si interface and propagate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d086b0544a1312f0014159b2ea865f6b
Publikováno v:
Solar Energy Materials and Solar Cells. 145:206-216
A model, adapted from the Shockley–Queisser detailed balance model to tandem solar cells with a monolithically grown GaAs x P 1 −x top junction on a Si bottom junction, has been developed. Updated data have been used for the absorption spectrums.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8328a4e71ace7a0c7cea619241fa454d
https://doi.org/10.1016/j.solmat.2015.10.028
https://doi.org/10.1016/j.solmat.2015.10.028
Autor:
Juliane Clemens, Ralf Gogolin, Rolf Brendel, R. Ferre, Jan Schmidt, Nils-Peter Harder, Mircea Turcu
Publikováno v:
IEEE Journal of Photovoltaics. 4:1169-1176
We present an experimental method to quantify the series resistance R a-Si/ITO through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize R a-Si/ITO , we apply different a-Si:H and ITO deposition parameters. We fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b19c263222c416383272c791466b07eb
https://doi.org/10.1109/jphotov.2014.2328575
https://doi.org/10.1109/jphotov.2014.2328575
Autor:
Jan Krügener, Tobias Wietler, Robby Peibst, Rolf Brendel, Bianca Lim, Nils-Peter Harder, K. R. Hofmann, Udo Römer
Publikováno v:
IEEE Journal of Photovoltaics. 4:841-850
We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline ( c)-Si base junctions, which consistently describes the symmetrical behavior of an n+ poly-Si emitter/ p c-Si base and p+ poly-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87805e0950d1d9968deeb242938d1e7f
https://doi.org/10.1109/jphotov.2014.2310740
https://doi.org/10.1109/jphotov.2014.2310740
Autor:
Boris Veith, Pietro P. Altermatt, Jan Schmidt, Rolf Brendel, Florian Werner, Nils-Peter Harder, Tobias Ohrdes
Publikováno v:
Solar Energy Materials and Solar Cells. 120:436-440
Aluminum oxide provides an excellent surface passivation on p - and n -type crystalline silicon. On n -type silicon, however, the effective excess carrier lifetime τ eff is often found to be injection dependent. Our experimental results show that, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5c68840b6ad783b3b7890ec3001bcc3
https://doi.org/10.1016/j.solmat.2013.06.049
https://doi.org/10.1016/j.solmat.2013.06.049
Autor:
Roland Schmechel, Nils-Peter Harder, Fabian Kiefer, Martin Dehnen, Bernd Christian Kunert, Lucas A. Bitzer, Sebastian Meyer, Frederik Kunze, Martin Meseth, Niels Benson, Hartmut Wiggers, Malin Kummer, Hans Orthner, Nils Petermann
Publikováno v:
physica status solidi (a). 210:2456-2462
Laser doping of crystalline Si (c-Si) using highly doped Si nanoparticles (NPs) as the dopant source is investigated. For this purpose Si NPs are deposited onto c-Si substrates from dispersion using a spin coater and subsequently laser annealed by sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4874992bcd31cd790431818b6736cc6
https://doi.org/10.1002/pssa.201329012
https://doi.org/10.1002/pssa.201329012
Autor:
Rolf Brendel, Sarah Kajari-Schröder, Felix Haase, Nils-Peter Harder, Tobias Neubert, Udo Römer, Robby Peibst, J. Petermann
Publikováno v:
IEEE Journal of Photovoltaics. 3:976-984
We show the degradation of the front surface passivation by rear-side laser processing of thin silicon solar cells when using a laser with a pulse length of 8 ps. 45-μm-thick back-contact back-junction monocrystalline silicon solar cells show an ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f04a99b5eaa184624d71d90fc201c6
https://doi.org/10.1109/jphotov.2013.2261573
https://doi.org/10.1109/jphotov.2013.2261573
Autor:
Jan Krügener, Nils-Peter Harder
Publikováno v:
Energy Procedia 38 (2013)
We use SENTAURUS DEVICE simulation to investigate the effect of “passivated emitter and rear cell” (PERC) and “passivated emitter and rear, totally-diffused” (PERT) device architecture on the solar cells’ weak light performances. Injection-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40b2455cc40ecf40aa128f6a86563d11
Publikováno v:
SPIE Proceedings.
A model, derived from the detailed balance model from Shockley and Queisser, has been adapted to monolithically grown GaAsP/Si tandem dual junction solar cells. In this architecture, due to the difference of lattice parameters between the silicon bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d7b8bd65212df618933a80929f5666
https://doi.org/10.1117/12.2211113
https://doi.org/10.1117/12.2211113