Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Nils Nordell"'
Autor:
Sergiy Khartsev, Mattias Hammar, Juris Purans, Aleksejs Zolotarjovs, Anders Hallén, Nils Nordell
Publikováno v:
physica status solidi (a). 219:2100610
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cb21e32a85296e8c50e19775a091f2
https://doi.org/10.1002/pssa.202100610
https://doi.org/10.1002/pssa.202100610
Autor:
Anders Hallén, Susanne Karlsson, Margareta K. Linnarsson, Nils Nordell, Bengt Gunnar Svensson, Martin S. Janson
Publikováno v:
Materials Science Forum. :427-430
The thermal stability of the passivating hydrogen-aluminum complex ((HAl)-H-2) in 4H-silicon carbide has been studied by determining the effective diffusion constant for hydrogen in an AI-doped epitaxial layer. Assuming a complex comprised of one H-2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::badd7d4199dca6a16d1ccd967c42da2b
https://doi.org/10.4028/www.scientific.net/msf.353-356.427
https://doi.org/10.4028/www.scientific.net/msf.353-356.427
Autor:
Ivan Kassamakov, Liliana Kassamakova, Erik B. Svedberg, Roumen Kakanakov, Lynnette D. Madsen, Nils Nordell, Susan Savage
Publikováno v:
Scopus-Elsevier
The formation of Al/Si/p-4H SiC ohmic contacts at temperatures as low as 750 degreesC is reported in this paper. The dependence of electrical properties and contact morphology have been investigate ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c08e4479da828eeee33f85b8232d778
https://doi.org/10.4028/www.scientific.net/msf.338-342.1009
https://doi.org/10.4028/www.scientific.net/msf.338-342.1009
Autor:
Susanne Karlsson, Nils Nordell, Martin S. Janson, Anders Hallén, B. G. Svensson, Margareta K. Linnarsson
Publikováno v:
Scopus-Elsevier
The diffusion of deuterium (H-2) in epitaxial 4H-SiC layers with buried highly Al-acceptor doped regions has been studied by secondary ion mass spectrometry. H-2 was introduced in the near surface ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20ce787076ee97a1338190954fbf0af5
https://doi.org/10.1103/physrevb.61.7195
https://doi.org/10.1103/physrevb.61.7195
Autor:
Nils Nordell, Adolf Schöner, Martin S. Janson, Susanne Karlsson, B. G. Svensson, Margareta K. Linnarsson
Publikováno v:
Materials Science and Engineering: B. :275-280
Deuterium and lithium were introduced in p-type SiC by implantation of 20 keV H-2(+) or 30 keV Li-7(+) ions in order to form a diffusion source. The samples were subsequently annealed in vacuum in the temperature range 400-700 degrees C for 0.25 to 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd67ebd93aa959add5f47c28103a173
https://doi.org/10.1016/s0921-5107(98)00517-0
https://doi.org/10.1016/s0921-5107(98)00517-0
Publikováno v:
Scopus-Elsevier
Growth of 6H and 4H SiC has been performed on Si-face substrates with etched stripe mesas under low supersaturation conditions (which is obtained by keeping the C:Si ratio in the gas phase low) at the two different growth temperatures of 1480 and 162
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8f4c4b10e3905d598222ec3b8dee476
https://doi.org/10.1016/s0921-5107(98)00485-1
https://doi.org/10.1016/s0921-5107(98)00485-1
Autor:
Nils Nordell, Margareta K. Linnarsson, T Schmitt, K. Rottner, Adolf Schöner, Susanne Karlsson
Publikováno v:
Scopus-Elsevier
Nitrogen- and aluminum-doped 4H silicon carbide epitaxial layers were grown simultaneously on semi-insulating and conducting substrates. The layers were investigated by conventional van der Pauw Hall effect measurements and for comparison also with s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21c7c4ebdc66f315ce5216a0748b0db6
https://doi.org/10.1016/s0921-5107(98)00540-6
https://doi.org/10.1016/s0921-5107(98)00540-6
Autor:
Nils Nordell, Vytautas Grivickas, M. Frischholz, Susanne Karlsson, Augustinas Galeckas, Jan Linnros, K. Rottner
Publikováno v:
Materials Science and Engineering: B. :239-243
A spatially and time-resolved free carrier absorption method is applied to quantify surface recombination losses as compared to the bulk in 4H- and 6H-SiC structures. The observed carrier lifetime variation is discussed in terms of crystalline qualit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47252732ae4b93652b6b1d57b4f8ca86
https://doi.org/10.1016/s0921-5107(98)00510-8
https://doi.org/10.1016/s0921-5107(98)00510-8
Autor:
Ts. Marinova, Nils Nordell, Susan Savage, Roumen Kakanakov, Liliana Kassamakova, Anelia Kakanakova-Georgieva
Publikováno v:
Scopus-Elsevier
The electrical and chemical properties of Pd ohmic contacts to p-type 4H-SiC, together with their thermal stability, have been studied in the annealing temperature range 600–700°C. The ohmic behaviour of as-deposited and annealed contacts has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b8f535d585a824f623ed6d7704b6d69
https://doi.org/10.1016/s0921-5107(98)00520-0
https://doi.org/10.1016/s0921-5107(98)00520-0
Autor:
Liliana Kassamakova, L. Aborn, Susan Savage, Erik B. Svedberg, Lynnette D. Madsen, B. Hjorvarsson, Roumen Kakanakov, Ivan Kassamakov, Nils Nordell
Publikováno v:
IEEE Transactions on Electron Devices. 46:605-611
The formation of low resistivity Pd-based ohmic contacts to p-type 4H-SiC below 750/spl deg/C are reported herein. The electrical properties of the contacts were examined using I-V measurements and the transmission-line model (TLM) technique. Contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1221a53a3f0f59ba747b24c08660f533
https://doi.org/10.1109/16.748885
https://doi.org/10.1109/16.748885