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of 4
pro vyhledávání: '"Nils Kopperberg"'
Autor:
Nils Kopperberg, Stefan Wiefels, Karl Hofmann, Jan Otterstedt, Dirk J. Wouters, Rainer Waser, Stephan Menzel
Publikováno v:
IEEE Access, Vol 10, Pp 122696-122705 (2022)
In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are
Externí odkaz:
https://doaj.org/article/b226f2953f1b4a699407c9714427a910
Autor:
Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Muller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cuppers, Abdur R. Jalil, Qi Shu, Peter Schuffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Kruger, Leticia Pohls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grutzmacher, Matthias Wuttig, Dirk Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max Lemme, Rainer Leupers, Rainer Waser
Publikováno v:
IEEE 1 pp. (2022). doi:10.23919/DATE54114.2022.9774755
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE) : [Proceedings]-IEEE, 2022.-ISBN 978-3-9819263-6-1-doi:10.23919/DATE54114.2022.9774755
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE) : [Proceedings]-IEEE, 2022.-ISBN 978-3-9819263-6-1-doi:10.23919/DATE54114.2022.97747552022 Design, Automation & Test in Europe Conference & Exhibition (DATE), Antwerp, Belgium, 2022-03-14-2022-03-23
Web of Science
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE) : [Proceedings]-IEEE, 2022.-ISBN 978-3-9819263-6-1-doi:10.23919/DATE54114.2022.9774755
2022 Design, Automation & Test in Europe Conference & Exhibition (DATE) : [Proceedings]-IEEE, 2022.-ISBN 978-3-9819263-6-1-doi:10.23919/DATE54114.2022.97747552022 Design, Automation & Test in Europe Conference & Exhibition (DATE), Antwerp, Belgium, 2022-03-14-2022-03-23
Web of Science
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dda67b5e4c9d3e21fd0177396be21fb9
https://hdl.handle.net/2128/33681
https://hdl.handle.net/2128/33681
Publikováno v:
ACS applied materials & interfaces 13(48), 58066-58075 (2021). doi:10.1021/acsami.1c14667
ACS applied materials & interfaces 13(48), 58066-58075 (2021). doi:10.1021/acsami.1c14667
Published by American Chemical Society, Washington, DC
Published by American Chemical Society, Washington, DC
Autor:
Christopher Bengel, Nils Kopperberg, Stephan Menzel, Stefan Wiefels, Kaihua Zhang, Rainer Waser
Publikováno v:
IEEE Transactions on Electron Devices
One of the key challenges in the reliability of valence change [valence change-based memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term instability of the programed state. Due to read noise, program verify or shaping