Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Nilay Dagtekin"'
Autor:
Nilay Dagtekin, Adrian Mihai Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 233-239 (2015)
This paper investigates the consequences of several distinctive device characteristics of tunnel FETs (TFET), namely super-linear onset, uni-directional conduction, and the dominant gate-drain capacitance, regarding the energy consumption, propagatio
Externí odkaz:
https://doaj.org/article/915ffa113190424fa8dab08cf6a51306
Autor:
Adrian M. Ionescu, Nilay Dagtekin
Publikováno v:
IEEE Journal of the Electron Devices Society. 3:233-239
This paper investigates the consequences of several distinctive device characteristics of tunnel FETs (TFET), namely super-linear onset, uni-directional conduction, and the dominant gate-drain capacitance, regarding the energy consumption, propagatio
Autor:
Nilay Dagtekin, Adrian M. Ionescu
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
This paper presents the first energy efficient highly compact concept of active pixel sensor built with a single partially-gated tunnel FET (TFET). Experimental results show that the transistor characteristics of the investigated TFETs are nonlinearl
Publikováno v:
ESSDERC
We propose and report the significant improvement obtained by a non-uniform gate capacitance made by appropriate combination of high-k and low-k regions over the tunneling and the channel regions of a heterostucture TFET (called HKLKT-FET). In additi
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
Nowadays, Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving sub-thermal switching slopes and extremely low leakage currents. This is possible due to their reverse biased gated p-i-n diode configuration (Figs. 1a,
Autor:
Luca De Michielis, Ji Cao, Alexandru Rusu, Adrian M. Ionescu, Nilay Dagtekin, Giovanni A. Salvatore, Sebastian T. Bartsch
Publikováno v:
2011 International Electron Devices Meeting.
In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Ne
Autor:
Serge Vaudenay, Nilay Dagtekin, Stéphane Badel, Khaled Ouafi, Nicolas Reffe, Jorge Nakahara, Petr Sušil, Pouyan Sepehrdad
Publikováno v:
Cryptographic Hardware and Embedded Systems, CHES 2010 ISBN: 9783642150302
CHES
CHES
This paper describes and analyzes the security of a general-purpose cryptographic function design, with application in RFID tags and sensor networks. Based on these analyzes, we suggest minimum parameter values for the main components of this cryptog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd9f9d46205fdd5497b5ff12b5d874c5
Autor:
Adrian M. Ionescu, Nilay Dagtekin
Publikováno v:
Applied Physics Letters. 105:232105
Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable ou
Autor:
Adrian M. Ionescu, Livio Lattanzio, Mathieu Luisier, Heike Riel, Nilay Dagtekin, Arnab Biswas, Luca Selmi, L. De Michielis
Publikováno v:
Applied Physics Letters. 103:123509
In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of cir
Autor:
Wladyslaw Grabinski, Jean-Michel Hartmann, Claude Tabone, Nilay Dagtekin, Antonios Bazigos, Arnab Biswas, Adrian M. Ionescu, Maud Vinet, Cyrille Le Royer
In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c851d6e55e00d989678a69ca15f510c1
https://infoscience.epfl.ch/record/197068
https://infoscience.epfl.ch/record/197068