Zobrazeno 1 - 10
of 396
pro vyhledávání: '"Nikonov, Dmitri"'
Autor:
Fedorova, Natalya S., Nikonov, Dmitri E., Mangeri, John M., Li, Hai, Young, Ian A., Íñiguez, Jorge
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic
Externí odkaz:
http://arxiv.org/abs/2307.14789
Autor:
Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still ord
Externí odkaz:
http://arxiv.org/abs/2302.12162
Autor:
Bybee, Connor, Kleyko, Denis, Nikonov, Dmitri E., Khosrowshahi, Amir, Olshausen, Bruno A., Sommer, Friedrich T.
A prominent approach to solving combinatorial optimization problems on parallel hardware is Ising machines, i.e., hardware implementations of networks of interacting binary spin variables. Most Ising machines leverage second-order interactions althou
Externí odkaz:
http://arxiv.org/abs/2212.03426
Autor:
Choi, Won Young, Arango, Isabel C., Pham, Van Tuong, Vaz, Diogo C., Yang, Haozhe, Groen, Inge, Lin, Chia-Ching, Kabir, Emily S., Oguz, Kaan, Debashis, Punyashloka, Plombon, John J., Li, Hai, Nikonov, Dmitri E., Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix
Publikováno v:
Nano Lett. 22, 7992-7999 (2022)
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermi
Externí odkaz:
http://arxiv.org/abs/2210.09792
In this work we introduce the simplest, lowest-order Landau-like potential for BiFeO$_3$ and La-doped BiFeO$_3$ as an expansion around the paraelectric cubic phase in powers of polarization, FeO$_6$ octahedral rotations and strains. We present an ana
Externí odkaz:
http://arxiv.org/abs/2203.16677
Autor:
Parsonnet, Eric, Caretta, Lucas, Nagarajan, Vikram, Zhang, Hongrui, Taghinejad, Hossein, Behera, Piush, Huang, Xiaoxi, Kavle, Pravin, Fernandez, Abel, Nikonov, Dmitri, Li, Hai, Young, Ian, Analytis, James, Ramesh, Ramamoorthy
Publikováno v:
Phys. Rev. Lett. 129, 087601 (2022)
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong m
Externí odkaz:
http://arxiv.org/abs/2203.16519
Autor:
Kleyko, Denis, Bybee, Connor, Kymn, Christopher J., Olshausen, Bruno A., Khosrowshahi, Amir, Nikonov, Dmitri E., Sommer, Friedrich T., Frady, E. Paxon
Publikováno v:
NICE 2022: Neuro-Inspired Computational Elements Conference
In this paper, we present an approach to integer factorization using distributed representations formed with Vector Symbolic Architectures. The approach formulates integer factorization in a manner such that it can be solved using neural networks and
Externí odkaz:
http://arxiv.org/abs/2203.00920
Generating high-quality random numbers with a Gaussian probability distribution function is an important and resource consuming computational task for many applications in the fields of machine learning and Monte Carlo algorithms. Recently, CMOS-base
Externí odkaz:
http://arxiv.org/abs/2112.04577
Autor:
Li, Hai, Nikonov, Dmitri E., Lin, Chia-Ching, Camsari, Kerem, Liao, Yu-Ching, Hsu, Chia-Sheng, Naeemi, Azad, Young, Ian A.
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2022)
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is
Externí odkaz:
http://arxiv.org/abs/2110.10890
Autor:
Vicente-Arche, Luis M., Bréhin, Julien, Varotto, Sara, Cosset-Cheneau, Maxen, Mallik, Srijani, Salazar, Raphaël, Noël, Paul, Vaz, Diogo Castro, Trier, Felix, Bhattacharya, Suvam, Sander, Anke, Fèvre, Patrick Le, Bertran, François, Saiz, Guilhem, Ménard, Gerbold, Bergeal, Nicolas, Barthélémy, Agnès, Li, Hai, Lin, Chia-Ching, Nikonov, Dmitri E., Young, Ian A., Rault, Julien, Vila, Laurent, Attané, Jean-Philippe, Bibes, Manuel
Publikováno v:
Adv. Mater. 202102102 (2021)
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Exa
Externí odkaz:
http://arxiv.org/abs/2108.07479