Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Nikoletta Jegenyes"'
Autor:
Nain Mukesh, Bence G. Márkus, Nikoletta Jegenyes, Gábor Bortel, Sarah M. Bezerra, Ferenc Simon, David Beke, Adam Gali
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1517 (2023)
Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy def
Externí odkaz:
https://doaj.org/article/0b9dec5c3152439f887e014f7d6815df
Autor:
Szabolcs Czene, Nikoletta Jegenyes, Olga Krafcsik, Sándor Lenk, Zsolt Czigány, Gábor Bortel, Katalin Kamarás, János Rohonczy, David Beke, Adam Gali
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 1953 (2023)
Silicon carbide nanoparticles (SiC NPs) are promising inorganic molecular-sized fluorescent biomarkers. It is imperative to develop methods to functionalize SiC NPs for certain biological applications. One possible route is to form amino groups on th
Externí odkaz:
https://doaj.org/article/2ff1b25102114cdb9afc868ff8cc1dda
Autor:
Quang Chieu Bui, Ludovic Largeau, Martina Morassi, Nikoletta Jegenyes, Olivia Mauguin, Laurent Travers, Xavier Lafosse, Christophe Dupuis, Jean-Christophe Harmand, Maria Tchernycheva, Noelle Gogneau
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3528 (2019)
The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a p
Externí odkaz:
https://doaj.org/article/6189eaac1f204665bf0d7f6342e3937a
Autor:
Nikoletta Jegenyes, Martina Morassi, Pascal Chrétien, Laurent Travers, Lu Lu, Francois H. Julien, Maria Tchernycheva, Frédéric Houzé, Noelle Gogneau
Publikováno v:
Nanomaterials, Vol 8, Iss 6, p 367 (2018)
We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of Ga
Externí odkaz:
https://doaj.org/article/d4986e75072840d393519f57ceaf1822
Autor:
Mátyás M. Rudolf, Gábor Bortel, Bence G. Márkus, Nikoletta Jegenyes, Vladimir Verkhovlyuk, Katalin Kamarás, Ferenc Simon, Adam Gali, David Beke
Publikováno v:
ACS Applied Nano Materials. 5:8950-8961
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83d5ed38f27a985c6e66d5178b30f2d
https://doi.org/10.1021/acsanm.2c01156
https://doi.org/10.1021/acsanm.2c01156
Autor:
Gali, Szabolcs Czene, Nikoletta Jegenyes, Olga Krafcsik, Sándor Lenk, Zsolt Czigány, Gábor Bortel, Katalin Kamarás, János Rohonczy, David Beke, Adam
Publikováno v:
Nanomaterials; Volume 13; Issue 13; Pages: 1953
Silicon carbide nanoparticles (SiC NPs) are promising inorganic molecular-sized fluorescent biomarkers. It is imperative to develop methods to functionalize SiC NPs for certain biological applications. One possible route is to form amino groups on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::f91579f3e3f3e5e313e56b70422c96ec
Autor:
Maria Tchernycheva, Xavier Lafosse, Jean-Christophe Harmand, Laurent Travers, Martina Morassi, Ludovic Largeau, O. Mauguin, Noelle Gogneau, Quang Chieu Bui, Christophe Dupuis, Nikoletta Jegenyes
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3528 (2019)
Applied Sciences
Applied Sciences, MDPI, 2019, 9, pp.3528. ⟨10.3390/app9173528⟩
Volume 9
Issue 17
Applied Sciences
Applied Sciences, MDPI, 2019, 9, pp.3528. ⟨10.3390/app9173528⟩
Volume 9
Issue 17
The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ede53c75d3a7e5a7184906327a327e5f
https://www.mdpi.com/2076-3417/9/17/3528
https://www.mdpi.com/2076-3417/9/17/3528
Autor:
Xavier Lafosse, Christophe Dupuis, Martina Morassi, Laurent Travers, Noelle Gogneau, Quang Chieu Bui, Jean-Christophe Harmand, Ludovic Largeau, Olivia Mauguain, Maria Tchernycheva, Nikoletta Jegenyes
The development of sensors for monitoring Carbon Monoxide (CO) in a large range of temperature is of crucial importance in areas as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f718b6050d8f2197ba3fdff79cfb55a9
https://doi.org/10.20944/preprints201907.0049.v1
https://doi.org/10.20944/preprints201907.0049.v1
Autor:
Dominique Tournier, Davy Carole, Mihai Lazar, Nikoletta Jegenyes, François Cauwet, Gabriel Ferro, Jean Lorenzzi
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩
Crystal Growth & Design, American Chemical Society, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩
International audience; In this work, we report on the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiC by vapor-liquid-solid (VLS) mechanism using Ge(50)Si(50) melt. Mesas structures of various size and shape were ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44762696a88d3fcf5cc3a3cdf116b056
https://doi.org/10.1021/cg101487g
https://doi.org/10.1021/cg101487g
Autor:
Sergey A. Reshanov, Nikoletta Jegenyes, Gabriel Ferro, Romain Esteve, Adolf Schöner, Jean Lorenzzi
Publikováno v:
Journal of The Electrochemical Society
Journal of The Electrochemical Society, Electrochemical Society, 2011, 158 (6), pp.H630. ⟨10.1149/1.3565169⟩
Journal of The Electrochemical Society, Electrochemical Society, 2011, 158 (6), pp.H630. ⟨10.1149/1.3565169⟩
In this work we report on the various steps, from growth to processing, required for the fabrication of metaloxide-semiconductor (MOS) capacitors using 3C-SiC(111) material and with superior interfacial quality. The layers were first heteroepitaxiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d13f3fdb41f980b4d3deb10ba2d2b45
https://doi.org/10.1149/1.3565169
https://doi.org/10.1149/1.3565169