Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nikolay N. Voronin"'
Publikováno v:
2015 IEEE 15th Mediterranean Microwave Symposium (MMS).
This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 MHz to 50 GHz in a wide dynamic range from −40 dBm to +25 dBm which were fabricated using GaAs zero bias diode process. Directional and non-directional
Publikováno v:
2014 24th International Crimean Conference Microwave & Telecommunication Technology.
The present paper concerns the results of design and manufacturing of GaAs MMIC directional power detectors. Detectors frequency range is from 10 MHz up to 40 GHz. Insertion loss is less than 2 dB; chip size is 1.75 x 0.75 x 0.1 mm. MMIC can be used
Publikováno v:
2014 24th International Crimean Conference Microwave & Telecommunication Technology.
The results of ultrawideband power detectors development are presented. Detectors are designed as microwave monolithic integrated circuits (MMICs) produced with use of "Micran"'s GaAs zero-biased diode technology. Several detecting paths and series d
Publikováno v:
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
The results of design and manufacturing of absorbed power detectors MMIC's and directional power detector MMIC with frequency range up to 40 GHz based on zero-bias diodes are presented in this paper. Measured S-parameters show input return loss less
Publikováno v:
2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices.
The results of modeling the diode ZB-27 (production of “Micran” research & production company) using SPICE parameters are represented in this paper. The simulation results include current-voltage characteristic of the diode with the changes at di
Publikováno v:
2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices.
The work on creation a measurement system is represented. It allows analyzing the distortions arising in the passing band signals through nonlinear devices. The experimental data obtained for the two types of probe signals are given. Prospects of dev
Autor:
Andrey S. Zagorodny, Igor V. Yunusov, Alexander Y. Popkov, Nikolay N. Voronin, Alexey V. Fateev, Gennady G. Goshin
Publikováno v:
International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices.
Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at