Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nikolay Maleev"'
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter Bimberg
Publikováno v:
Photonics, Vol 10, Iss 6, p 660 (2023)
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf
Externí odkaz:
https://doaj.org/article/61581f9d1e4c403caf1aecb6d21f2689
Autor:
Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Evgenii Kolodeznyi, Dmitrii Denisov, Natalia Kryzhanovskaya, Kirill Voropaev, Victor Ustinov, Anton Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, Dieter Bimberg
Publikováno v:
IEEE Photonics Technology Letters. 35:297-300
Autor:
Bimberg, Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter
Publikováno v:
Photonics; Volume 10; Issue 6; Pages: 660
A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed perf