Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Nikolay I. Mashin"'
Autor:
A. A. Ezhevskii, Alexander I. Mashin, Dmitri A. Khokhlov, Nikolay I. Mashin, A. F. Khokhlov, Alexey V. Ershov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:257-261
The influence of the Ge+ dose and post-implantation annealing on the dc dark-, photo conductivity and EPR of amorphous Si films have been investigated. Amorphous Si (a-Si) thin films have been deposited by evaporation. Doses ranged from 6 × 1014 to
Autor:
Alexey V. Ershov, Alexander A. Ezhevskii, Alexander F. Khokhlov, Dmitri A. Khokhlov, Alexander I. Mashin, Nikolay I. Mashin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d24ac9382e8d858ae92ee6e1ac16d4f
https://doi.org/10.1016/b978-0-444-82334-2.50051-4
https://doi.org/10.1016/b978-0-444-82334-2.50051-4