Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nikolay I, Verbitskiy"'
Autor:
N. A. Kiselev, Andrei A. Volykhov, Andrei A. Eliseev, Jeremy Sloan, Nikolay I. Verbitskiy, N. S. Falaleev, Andrei S. Kumskov, Alexey V. Lukashin, V. G. Zhigalina, Alexander L. Vasiliev, Lada V. Yashina
Publikováno v:
Nano Letters. 17:805-810
The structural organization of compounds in a confined space of nanometer-scale cavities is of fundamental importance for understanding the basic principles for atomic structure design at the nanolevel. Here, we explore size-dependent structure relat
Autor:
Roland J. Koch, Nikolay I. Verbitskiy, Oliver Rader, Joke Hadermann, Carolien Callaert, Fumihiko Matsui, Jaime Sánchez-Barriga, Andrey A. Volykhov, Lada V. Yashina, M. V. Kuznetsov, Andrei Varykhalov, Ilya I. Ogorodnikov
Publikováno v:
Physical chemistry, chemical physics
To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 a
Autor:
Jaime, Sánchez-Barriga, Ilya I, Ogorodnikov, Mikhail V, Kuznetsov, Andrey A, Volykhov, Fumihiko, Matsui, Carolien, Callaert, Joke, Hadermann, Nikolay I, Verbitskiy, Roland J, Koch, Andrei, Varykhalov, Oliver, Rader, Lada V, Yashina
Publikováno v:
Physical chemistry chemical physics : PCCP. 19(45)
To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi
Autor:
Boris V. Senkovskiy, Alexander Grüneis, V. K. Adamchuk, Alexander Fedorov, Oleg Yu. Vilkov, Nikolay I. Verbitskiy, Lada V. Yashina, Clemens Laubschat, Andrey A. Volykhov, Dmitry Yu. Usachov, Denis V. Vyalikh, Mani Farjam
Publikováno v:
Nano Letters. 14:4982-4988
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material stil