Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nikolaos Tsavdaris"'
Publikováno v:
Materials Science Forum. 963:123-126
The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df33560bd0078fa179ddbe030d48baf
https://doi.org/10.4028/www.scientific.net/msf.963.123
https://doi.org/10.4028/www.scientific.net/msf.963.123
Autor:
Eirini Sarigiannidou, Gilles Renou, Roman Reboud, Stéphane Coindeau, Frédéric Mercier, Manoel Jacquemin, Elisabeth Blanquet, Dibyendu Harza, Nikolaos Tsavdaris, Florence Robaut, Max Hofheinz
Publikováno v:
Chemistry of Materials
Chemistry of Materials, 2017, 29 (14), pp.5824-5830. ⟨10.1021/acs.chemmater.7b00490⟩
Chemistry of Materials, American Chemical Society, 2017, 29 (14), pp.5824-5830. ⟨10.1021/acs.chemmater.7b00490⟩
Chemistry of Materials, 2017, 29 (14), pp.5824-5830. ⟨10.1021/acs.chemmater.7b00490⟩
Chemistry of Materials, American Chemical Society, 2017, 29 (14), pp.5824-5830. ⟨10.1021/acs.chemmater.7b00490⟩
The deposition of epitaxial superconducting (Nb,Ti)N thin films is addressed with a new approach, using a chemical vapor deposition technique with in situ production of precursors. Both classic and reactive CVD process are optimized toward (i) the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aec73f3bf5499adbdd9d6117c7b23074
https://doi.org/10.1021/acs.chemmater.7b00490
https://doi.org/10.1021/acs.chemmater.7b00490
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩
Journal of Crystal Growth, Elsevier, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩
International audience; In this paper are reviewed the main reported trends of Al incorporation as a function of the main 4H-SiC epitaxial growth parameters. Al incorporation was found to be limited by its high desorption rate for all the parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b81032231a13c3e57c8d1a907cb6bd8f
https://hal.archives-ouvertes.fr/hal-02121592
https://hal.archives-ouvertes.fr/hal-02121592
Autor:
F. Blanchet, Romain Albert, Claude Chapelier, Dibyendu Hazra, Frédéric Mercier, Alexander Grimm, Max Hofheinz, Elisabeth Blanquet, Aniruddha Konar, Manoel Jacquemin, Nikolaos Tsavdaris, Salha Jebari, Anna Mukhtarova
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩
We report on the superconducting properties of ${\mathrm{Nb}}_{1\ensuremath{-}x}{\mathrm{Ti}}_{x}\mathrm{N}$ thin films of thickness $\ensuremath{\sim}10$ nm, with different Ti fraction $x$ in the range $0\ensuremath{\le}x\ensuremath{\le}0.5$, deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16f2c5921debcc40a8f4ec86ba113f56
https://hal.archives-ouvertes.fr/hal-02046421
https://hal.archives-ouvertes.fr/hal-02046421
Autor:
Didier Chaussende, Kanaparin Ariyawong, J.M. Dedulle, Eirini Sarigiannidou, Nikolaos Tsavdaris
Publikováno v:
Crystal Growth & Design. 15:156-163
The nucleation and propagation of foreign polytypes during seeded sublimation growth of silicon carbide is addressed on a macroscopic footing, using a coupled experimental and numerical simulation approach. Experiments are conducted in a contactless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337ca2333c797b92ce91d01a8d3598d4
https://doi.org/10.1021/cg501095b
https://doi.org/10.1021/cg501095b
Autor:
Jean Marc Dedulle, Kanaparin Ariyawong, Nikolaos Tsavdaris, Eirini Sarigiannidou, Odette Chaix-Pluchery, Didier Chaussende
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩
Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩
International audience; We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3959e0ed85f9f4ecd9e3cc78d516c589
https://doi.org/10.4028/www.scientific.net/msf.778-780.13
https://doi.org/10.4028/www.scientific.net/msf.778-780.13
Autor:
Didier Chaussende, Nikolaos Tsavdaris, Thierry Ouisse, Kanaparin Ariyawong, Jean Marc Dedulle, Eirini Sarigiannidou
Publikováno v:
Materials Science Forum. :31-34
Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be786970784641ccdec2c3aca76b9f9
https://doi.org/10.4028/www.scientific.net/msf.778-780.31
https://doi.org/10.4028/www.scientific.net/msf.778-780.31
Autor:
Kanaparin Ariyawong, Jean Marc Dedulle, Yun Ji Shin, Nikolaos Tsavdaris, Didier Chaussende, Thierry Ouisse, Roland Madar, Odette Chaix-Pluchery, Martin Seiss, Eirini Sarigiannidou, Joseph La Manna
Publikováno v:
Materials Science Forum. :3-8
In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an « industrial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c4cd96c58259d939dfaf63ccc2bcb01
https://doi.org/10.4028/www.scientific.net/msf.778-780.3
https://doi.org/10.4028/www.scientific.net/msf.778-780.3
Autor:
Claude Chapelier, Max Hofheinz, F. Blanchet, Elisabeth Blanquet, Dibyendu Hazra, Frédéric Mercier, Alexander Grimm, Salha Jebari, Nikolaos Tsavdaris
Publikováno v:
Superconductor Science and Technology
Superconductor Science and Technology, IOP Publishing, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩
Superconductor Science and Technology, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩
Superconductor Science and Technology, IOP Publishing, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩
Superconductor Science and Technology, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩
International audience; Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures (T-c similar to 16.5 K) and largest gap among conventional s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5c18a96351795ba52cdbe3bdf87d618
https://hal.archives-ouvertes.fr/hal-01451259
https://hal.archives-ouvertes.fr/hal-01451259
Autor:
Donatas Dargis, Didier Chaussende, Eirini Sarigiannidou, Kęstutis Jarašiūnas, Gediminas Liaugaudas, Nikolaos Tsavdaris
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.253-256
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.253-256
The electronic quality of a Physical Vapour Transport (PVT) grown 15R-SiC crystal at different stages of growth was assessed by time-resolved optical pump-probe techniques. The measured differential transmittivity (DT) kinetics for the layers corresp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d742331cd499a62e4003c793b3caa2ea
https://hal.archives-ouvertes.fr/hal-02012973
https://hal.archives-ouvertes.fr/hal-02012973