Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Nikolaos Frangis"'
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 1878 (2021)
Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers g
Externí odkaz:
https://doaj.org/article/87e071c5c2d34b9c9b791efce7f4689e
Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Publikováno v:
Nanomaterials, Vol 11, Iss 1878, p 1878 (2021)
Nanomaterials
Volume 11
Issue 8
Nanomaterials
Volume 11
Issue 8
Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fea019510e33b7f912c2768a50f83f3
https://www.mdpi.com/2079-4991/11/8/1878
https://www.mdpi.com/2079-4991/11/8/1878
Autor:
Ch. B. Lioutas, Efstathios K. Polychroniadis, Pawel Prystawko, Mike Leszczynski, Nikolaos Frangis, Alexandra Gkanatsiou
Publikováno v:
Superlattices and Microstructures. 103:376-385
AlGaN/GaN buffer heterostructures were grown on “on axis” and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved aft
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceba9aabcc274799bba5e38a4c35ff39
https://doi.org/10.1016/j.spmi.2016.10.024
https://doi.org/10.1016/j.spmi.2016.10.024
Autor:
Nikolaos Vouroutzis, György Radnóczi, Nikolaos Frangis, Béla Pécz, Daniel Knez, Ferdinand Hofer, J. Stoemenos
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
The growth of the poly-Si films was studied by Transmission Electron Microscopy (TEM) after Ni Metal Induced Lateral Crystallization (Ni-MILC) of amorphous Si films at 413 °C. Significant differences in the morphology and the mode of growth of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52d41209913e68c93b6e83f5bfcacb89
https://doi.org/10.1038/s41598-019-39503-9
https://doi.org/10.1038/s41598-019-39503-9
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
Autor:
Th. Altantzis, Ch. B. Lioutas, Efstathios K. Polychroniadis, Alexandra Gkanatsiou, Nikolaos Frangis, Pawel Prystawko, G. Van Tendeloo, Michał Leszczyński
Publikováno v:
Materials science in semiconductor processing
AlGaN/GaN heterostructures were grown on “on-axis” and 2° off (0001) 4H-SiC substrates by metalorganic vapor phase epitaxy (MOVPE). Structural characterization was performed by transmission electron microscopy. The dislocation density, being gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22870f1b4e680c63f640769dd4933c0d
https://hdl.handle.net/10067/1562000151162165141
https://hdl.handle.net/10067/1562000151162165141
Autor:
Steven N. Girard, Mercouri G. Kanatzidis, Chrysoula Ioannidou, Christos B. Lioutas, Nikolaos Frangis
Publikováno v:
Chemistry of Materials. 28:3771-3777
The high-performance PbTe–SnTe–PbS thermoelectric system forms a completely new composite PbTe–PbSnS2 with high n-type figure of merit. Electron diffraction and high-resolution electron microscopy characterization of the thermoelectric composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d58bb1a670e0f48a1d0bbeb7609d8ce
https://doi.org/10.1021/acs.chemmater.6b00710
https://doi.org/10.1021/acs.chemmater.6b00710
Autor:
Béla Pécz, E. Dodony, György Radnóczi, Nikolaos Vouroutzis, Gábor Battistig, Nikolaos Frangis, J. Stoemenos
Publikováno v:
Materials Today: Proceedings. 3:825-831
Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b392ca332306c62f6c06b5fa16efc3b
https://doi.org/10.1016/j.matpr.2016.02.015
https://doi.org/10.1016/j.matpr.2016.02.015
Autor:
Nikolaos Frangis, Narendraraj Chandraraj, Efstathios K. Polychroniadis, Alexandra Gkanatsiou, Mike Leszczynski, Christos B. Lioutas, Pawel Prystawko
Publikováno v:
Advanced Materials Research. 936:656-660
The present work concerns the microstructural characterization of a multi-component (based on GaN and related materials) and multi-layered (5 layers) film, grown on 6H-SiC substrate (with a misorientation of 1 degree off from the (0001) plane), using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::039920d28d962879dbdcc5091f981710
https://doi.org/10.4028/www.scientific.net/amr.936.656
https://doi.org/10.4028/www.scientific.net/amr.936.656