Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nikolai S. Paschin"'
Autor:
I. O. Akhundov, Alexander E. Klimov, S. P. Suprun, E. V. Fedosenko, D. V. Ishchenko, V. N. Sherstyakova, Igor G. Neizvestny, A. S. Tarasov, Nikolai S. Paschin, A. N. Akimov, Oleg E. Tereshchenko
Publikováno v:
Semiconductors. 54:951-955
The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c58faff57a3d5874a14037b49044d7d
https://doi.org/10.1134/s1063782620080035
https://doi.org/10.1134/s1063782620080035
Autor:
A. N. Akimov, M. L. Savchenko, V. S. Epov, Alexander E. Klimov, Nikolai S. Paschin, E. V. Fedosenko, A. S. Yaroshevich
Publikováno v:
Semiconductors. 51:1522-1526
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Fourier spectrometer are compared with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92878cbdbf36168d53fba869f3670a6
https://doi.org/10.1134/s1063782617110033
https://doi.org/10.1134/s1063782617110033
Autor:
Denis V. Ishchenko, Artem N. Papantonopulo, V. N. Sherstyakova, Nikolai S. Paschin, Alexander E. Klimov, A. N. Akimov
Publikováno v:
2017 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
The experimental results on photoconductivity of PbSnTe:In films in the case of interband excitation under variable light conditions with the fixation of the photocurrent are discussed in the paper. It is shown that a decrease in luminance by more th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c502ae87b7242c0fe7d0e359c4587930
https://doi.org/10.1109/edm.2017.7981698
https://doi.org/10.1109/edm.2017.7981698
Autor:
Nikolai S. Paschin, Denis V. Ishchenko, Andrey S. Tarasov, V. N. Sherstyakova, A. N. Akimov, Alexander E. Klimov
Publikováno v:
2017 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
Method of producing planar patterns (p+-i-p+, p+-i-n+) based on thin films of Pb 1−x Sn x Te:In is described. Experimental measurements of stationary and transient photoconductivity at liquid-helium temperatures are presented only for p+-i-p+ struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e098f284cc878320715251434b01371
https://doi.org/10.1109/edm.2017.7981701
https://doi.org/10.1109/edm.2017.7981701
Publikováno v:
Journal of Physics: Conference Series. 946:012016
The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1?x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f77b7b74e8bb1c35f1619840565c6b48
https://doi.org/10.1088/1742-6596/946/1/012016
https://doi.org/10.1088/1742-6596/946/1/012016
Autor:
Denis V. Ischenko, Nikolai S. Paschin, Alexander E. Klimov, Igor G. Neizvestny, V. N. Shumsky, V. N. Sherstyakova
Publikováno v:
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab420fceae702baca2aac6e5e89f40b
https://doi.org/10.1109/edm.2014.6882483
https://doi.org/10.1109/edm.2014.6882483
Publikováno v:
2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce035b85486a0640fe906131f445f76
https://doi.org/10.1109/edm.2014.6882482
https://doi.org/10.1109/edm.2014.6882482
Autor:
V.M. Popik, A.S. Kozlov, T. N. Goryachevskaya, L. E. Medvedev, Nikolay Vinokurov, Sergei A. Kuznetsov, S. G. Peltek, Stanislav Serednyakov, M.A. Scheglov, Vitaly V. Kubarev, Alexander E. Klimov, K. S. Palagin, V. V. Yakovlev, G.N. Kulipanov, Nikolai S. Paschin, D. G. Esaev, A. K. Petrov, Alexander V. Okotrub, V. Ya. Prinz, T. V. Salikova, N. S. Zaigraeva, Alexander Skrinsky, E. V. Naumova, Boris A. Knyazev, Oleg A. Shevchenko, M. G. Vlasenko, E.I. Kolobanov, E. N. Chesnokov, M. A. Dem’yanenko, V. K. Ovchar, R. R. Akberdin, A.N. Matveenko
Publikováno v:
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.
High power THz applications on the Novosibirsk terahertz free electron laser are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff867d31b63ce04047810b152fffc99
https://doi.org/10.1109/icimw.2009.5325511
https://doi.org/10.1109/icimw.2009.5325511
Publikováno v:
2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices.
In the present paper, experimental data and an analysis of dark transient injection currents in PbSnTe:In films at helium temperature are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42b5fa9babbb4768e4dbacc2c967784
https://doi.org/10.1109/edm.2009.5173944
https://doi.org/10.1109/edm.2009.5173944