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Autor:
Irina O. Dzhun, Andrey V. Gerasimenko, Alexander A. Ezhov, Stanislav I. Bezzubov, Valeria V. Rodionova, Christina A. Gritsenko, Nikolai G. Chechenin
Publikováno v:
Magnetochemistry, Vol 9, Iss 10, p 218 (2023)
Thin film ferromagnet/antiferromagnet (F/AF) exchange biased structures that are widely used in GMR spin valves are considered nowadays as promising systems for antiferromagnetic spintronic and spin-orbitronic devices. Here, the temperature dependenc
Externí odkaz:
https://doaj.org/article/002c069d6f0c45faaacaa5da2d34ef95
