Výsledky vyhledávání - "Nikolai A. Maleev"

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

Autor: A. A. Blokhin, Innokenty I. Novikov, D. V. Denisov, A. V. Babichev, M. A. Bobrov, Nikolai A. Maleev, S. S. Rochas, S. A. Blokhin, A. G. Kuzmenkov, L. Ya. Karachinsky, A. P. Vasil’ev, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, A. S. Ionov, A. G. Gladyshev

Publikováno v: Technical Physics Letters. 46:1257-1262

An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a62c9ad38d363aff5e9005d2930f6cf0
https://doi.org/10.1134/s1063785020120172

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A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

Autor: A. G. Kuzmenkov, V. M. Ustinov, A. V. Babichev, M. A. Bobrov, A. P. Vasil’ev, A. S. Ionov, L. Ya. Karachinsky, S. A. Blokhin, Innokenty I. Novikov, K. O. Voropaev, D. V. Denisov, Nikolai A. Maleev, A. Yu. Egorov, A. A. Blokhin, S. S. Rochas, A. G. Gladyshev

Publikováno v: Technical Physics Letters. 46:854-858

A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated by wafer fusion of an InAlGaAsP/InP optical cavity and wafers with A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e233f1fbe856ad90b24877a2a6d3140
https://doi.org/10.1134/s1063785020090023

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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

Autor: M. M. Kulagina, E. V. Petryakova, A. P. Vasil’ev, M. A. Bobrov, V. A. Belyakov, Nikolai A. Maleev, S. N. Maleev, I. V. Makartsev, Yu. P. Kudryashova, F. A. Ahmedov, S. I. Troshkov, V. M. Ustinov, S. A. Blokhin, A. G. Fefelov, E. L. Fefelova, A. V. Egorov, A. G. Kuzmenkov

Publikováno v: Technical Physics Letters. 45:1092-1096

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4539ffa476858a0901881f61d5c920c0
https://doi.org/10.1134/s1063785019110075

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Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope

Autor: M. A. Bobrov, V. M. Ustinov, A. G. Kuz’menkov, M. M. Kulagina, Nikolai A. Maleev, S. A. Blokhin

Publikováno v: Gyroscopy and Navigation. 9:177-182

Vertical-cavity surface-emitting lasers (VCSELs) of 895 nm spectral range, with fixed direction of output polarization have been developed. These lasers provide single-mode output power of over 1 mW at an operational temperature of 60°С, at orthogo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0004a530d83883ec83e1b8a4514859c5
https://doi.org/10.1134/s2075108718030057

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Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature

Autor: Nikolai A. Maleev, Yu. M. Zadiranov, A. A. Usikova, L. E. Vorob’ev, V. V. Mamutin, N. D. Il’inskaya, A. V. Lyutetskii, A. P. Vasil’ev, A. N. Sofronov, V. M. Ustinov, D. A. Firsov

Publikováno v: Technical Physics Letters. 44:814-816

We report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::848da4c1a21f70a43db16ee7d11819c7
https://doi.org/10.1134/s1063785018090249

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Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots

Autor: S. A. Blokhin, Nikolai A. Maleev, A. G. Kuzmenkov, Vladislav V. Dudelev, Grigorii S. Sokolovskii, Edik U. Rafailov, V. Yu. Mylnikov, V. I. Kuchinskii, V. M. Ustinov

Publikováno v: Technical Physics Letters. 43:1099-1101

Vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots with an oxide-aperture diameter of ~1 μm have been studied. It is established that peaking of the output optical pulses to 50–100 ps can be ach

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9b58bf5a223fab473870772d60e8dcf
https://doi.org/10.1134/s1063785017120161

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Optically pumped non-zero field magnetometric sensor for the magnetoencephalographic systems using intra-cavity contacted VCSELs with rhomboidal oxide current aperture

Autor: S. P. Dmitriev, S. A. Blokhin, A. S. Pazgalev, A. K. Vershovskii, A. G. Kuzmenkov, A. A. Blokhin, M. A. Bobrov, M. V. Petrenko, Nikolai A. Maleev, L. Ya Karachinskii, I. I. Novikov, V. M. Ustinov, A P Vasyl’ev

Publikováno v: Journal of Physics: Conference Series. 1697:012175

We demonstrate the possibility of using vertical-cavity surface emitting lasers with intracavity contacts and a rhomboidal oxide current aperture for creating compact optically pumped 133Cs atomic magnetometer operating in non-zero magnetic fields, w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af8fc1a13e4010ca1581a6fc251a3196
https://doi.org/10.1088/1742-6596/1697/1/012175

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A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range

Autor: I. O. Karpovsky, M. M. Kulagina, V. S. Levitsky, S. A. Blokhin, A. P. Vasil’ev, Yu. A. Guseva, Pavel N. Brunkov, V. Lisak, A. G. Kuzmenkov, V. M. Ustinov, Nikolai A. Maleev, Yu. M. Zadiranov, N. D. Prasolov, M. A. Bobrov, S. I. Troshkov, A. A. Blokhin

Publikováno v: Technical Physics Letters. 42:1049-1053

Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fcce923d48ed03ff7713f2340e9bbdf2
https://doi.org/10.1134/s1063785016100199

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Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

Autor: A. G. Kuzmenkov, E.V. Nikitina, S. A. Blokhin, V. M. Ustinov, A. P. Vasil’ev, I. O. Karpovskii, V. N. Nevedomskii, M. A. Bobrov, A. A. Blokhin, S. I. Troshkov, Nikolai A. Maleev, Yu. M. Zadiranov, Eduard Moiseev, N. V. Kryzhanovskaya

Publikováno v: Technical Physics Letters. 42:1009-1012

The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is investigated. It is demonstrated that using a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0190624979f945eed52120fe2711c4c3
https://doi.org/10.1134/s1063785016100023

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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

Autor: Nikolai A. Maleev, Yu. M. Zadiranov, A. G. Kuzmenkov, A. P. Vasil’ev, M. M. Kulagina, V. Lysak, S. I. Troshkov, V. M. Ustinov, Yu. A. Guseva, A. A. Blokhin, M. A. Bobrov, S. A. Blokhin

Publikováno v: Semiconductors. 50:1390-1395

The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59a4fff758bf496ab12fa08da7a7e5f7
https://doi.org/10.1134/s1063782616100092

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