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pro vyhledávání: '"Nikolai A. Andrianov"'
Autor:
Artem A. Osipov, Nikolai A. Andrianov, Anastasia B. Speshilova, Alina E. Gagaeva, Sarah Risquez, Alexandr Vorobyev, Sergey E. Alexandrov
Publikováno v:
Plasma Chemistry and Plasma Processing. 43:697-707
Autor:
A. S. Smirnov, Yuri Barsukov, Vladimir Volynets, Nikolai A. Andrianov, Alexander V. Tulub, A. A. Kobelev
Publikováno v:
Journal of Vacuum Science & Technology A. 36:061301
Dry etching of silicon nitride (SiN) is a challenging process in the semiconductor industry and requires high etch selectivity. Fluorine containing chemistry is widely used to etch silicon based materials, and one of the methods to increase the etch