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pro vyhledávání: '"Nikolaenkov, D. V."'
The hopping transport of charge carries in 3-dimensional disordered semiconductors is analyzed in this work. It is assumed that the density of localized states is a decreasing function of energy and contribution of thermoactivated jumps into the tran
Externí odkaz:
http://arxiv.org/abs/cond-mat/0207091
Publikováno v:
Journal of Applied Physics; Dec2001, Vol. 90 Issue 11, p5554, 7p, 6 Graphs
Publikováno v:
Semiconductors. Jun2000, Vol. 34 Issue 6, p655. 3p.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::18d4370f4ad6d6021488669160b786ab
http://www.scopus.com/inward/record.url?eid=2-s2.0-0141449137&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0141449137&partnerID=MN8TOARS
Autor:
Nititenko, V. R., Nikolaenkov, D. V., Kundina, Ju F., Tyutnev, A. P., Vladimir Saenko, Pozhidaev, E. D.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::158606ca1eff71e2954c3eb771bbad32
http://www.scopus.com/inward/record.url?eid=2-s2.0-33751318245&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33751318245&partnerID=MN8TOARS
Publikováno v:
Nature Communications; 8/12/2021, Vol. 12 Issue 1, p1-8, 8p
Autor:
Vladimir V Uchaikin, Renat T Sibatov
The standard (Markovian) transport model based on the Boltzmann equation cannot describe some non-equilibrium processes called anomalous that take place in many disordered solids. Causes of anomality lie in non-uniformly scaled (fractal) spatial hete