Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Niklas Roschewsky"'
Autor:
Keren J. Kanarik, Wojciech T. Osowiecki, Yu Lu, Dipongkar Talukder, Niklas Roschewsky, Sae Na Park, Mattan Kamon, David M. Fried, Richard A. Gottscho
Publikováno v:
Nature. 616:707-711
One of the bottlenecks to building semiconductor chips is the increasing cost required to develop chemical plasma processes that form the transistors and memory storage cells1,2. These processes are still developed manually using highly trained engin
Autor:
Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky, Hannah Kleidermacher, Shehrin Sayed, Suraj Cheema, Dinah Bouma, Frances Hellman, Sayeef Salahuddin
Spin-orbit torque (SOT) shows great potential for next-generation memory technology. Conventionally, the underlying physics of SOT has been associated with heavy (high-Z) elements and/or intrinsic bandstructure. Here, we report large spin-orbit torqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a9191dc484f7fc85416899b65c5b649
https://doi.org/10.21203/rs.3.rs-1946953/v1
https://doi.org/10.21203/rs.3.rs-1946953/v1
Publikováno v:
Physical Review Applied. 14
We predict that it is possible to achieve a purely voltage-driven switching of a ferromagnet using spin-dependent resonant tunneling. In a configuration of two exchange-coupled magnets through a resonant-tunneling barrier, application of a voltage le
Autor:
Emily S. Walker, P. G. Gowtham, Niklas Roschewsky, Sayeef Salahuddin, Seth R. Bank, Frances Hellman, Sarah Muschinske
Publikováno v:
Physical Review B, vol 99, iss 19
Roschewsky, Niklas; Walker, Emily S; Gowtham, Praveen; Muschinske, Sarah; Hellman, Frances; Bank, Seth R; et al.(2019). Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures. Physical Review B, 99(19). doi: 10.1103/physrevb.99.195103. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8fr240cp
Roschewsky, Niklas; Walker, Emily S; Gowtham, Praveen; Muschinske, Sarah; Hellman, Frances; Bank, Seth R; et al.(2019). Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures. Physical Review B, 99(19). doi: 10.1103/physrevb.99.195103. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8fr240cp
Harmonic measurements of the longitudinal and transverse voltages in Bi-Sb/Co bilayers are presented. A large second harmonic voltage signal due to the ordinary Nernst effect is observed. In experiments where a magnetic field is rotated in the film p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f573b9549332533248273bf93507e684
https://escholarship.org/uc/item/8fr240cp
https://escholarship.org/uc/item/8fr240cp
Publikováno v:
Applied Physics Letters, vol 112, iss 23
Roschewsky, N; Schafer, S; Hellman, F; & Nikitin, V. (2018). Perpendicular magnetic tunnel junction performance under mechanical strain. Applied Physics Letters, 112(23). doi: 10.1063/1.5034145. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/9mg2z1sz
Roschewsky, N; Schafer, S; Hellman, F; & Nikitin, V. (2018). Perpendicular magnetic tunnel junction performance under mechanical strain. Applied Physics Letters, 112(23). doi: 10.1063/1.5034145. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/9mg2z1sz
© 2018 Author(s). In this work, we investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::757ea06ecb637124a41822f60c1c5b13
https://escholarship.org/uc/item/9mg2z1sz
https://escholarship.org/uc/item/9mg2z1sz
Publikováno v:
Physical Review B. 96
We report on spin-orbit torque measurements in ferrimagnetic ${\mathrm{Gd}}_{21}{({\mathrm{Fe}}_{90}{\mathrm{Co}}_{10})}_{79}$ films with bulk perpendicular magnetic anisotropy and thicknesses up to $30\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$. The da
Publikováno v:
Journal of Applied Physics. 126:163905
Based on micromagnetic simulations, we show that it is possible to achieve spin–orbit torque field-free switching of a synthetic antiferromagnet comprised of two ferromagnetic layers with perpendicular magnetic anisotropy, sitting on top of a conve
Autor:
Tomoya Matsumura, Satoshi Iwata, Takeshi Kato, Frances Hellman, Niklas Roschewsky, Sayeef Salahuddin, Suraj Cheema
Publikováno v:
Applied Physics Letters, vol 109, iss 11
Roschewsky, N; Matsumura, T; Cheema, S; Hellman, F; Kato, T; Iwata, S; et al.(2016). Spin-orbit torques in ferrimagnetic GdFeCo alloys. Applied Physics Letters, 109(11). doi: 10.1063/1.4962812. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/9ft2j2xx
Roschewsky, N; Matsumura, T; Cheema, S; Hellman, F; Kato, T; Iwata, S; et al.(2016). Spin-orbit torques in ferrimagnetic GdFeCo alloys. Applied Physics Letters, 109(11). doi: 10.1063/1.4962812. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/9ft2j2xx
The spin-orbit torque switching of ferrimagnetic Gd$_x$(Fe$_{90}$Co$_{10}$)$_{100-x}$ films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching follows the same
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a2d6bb0bc6c0b8653b355e0be6e8565
https://escholarship.org/uc/item/9ft2j2xx
https://escholarship.org/uc/item/9ft2j2xx
Autor:
Marguerite Epstein-Martin, Don Heiman, Markus Münzenberg, Jagadeesh S. Moodera, Bin Li, Badih A. Assaf, Marius Eich, Niklas Roschewsky
Publikováno v:
Physical Review Letters. 110
A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport
Autor:
Hans Huebl, Erich Dobler, Niklas Roschewsky, Sibylle Meyer, Rudolf Gross, Sebastian T. B. Goennenwein, Michael Schreier
A new measurement technique for the spin Seebeck effect is presented, wherein the normal metal layer used for its detection is exploited simultaneously as a resistive heater and thermometer. We show how the various contributions to the measured total
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06ef8f04c8679cb4f108b5f7d93be708