Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Niklas Keskitalo"'
Publikováno v:
Defect and Diffusion Forum. :193-204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee18a8170333e7b35074266e8e4fd520
https://doi.org/10.4028/www.scientific.net/ddf.153-155.193
https://doi.org/10.4028/www.scientific.net/ddf.153-155.193
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 120:27-32
Lightly doped silicon samples of both n- and p-type have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d80d5631ff8f115ee317fdced03a6b9b
https://doi.org/10.1016/s0168-583x(96)00474-0
https://doi.org/10.1016/s0168-583x(96)00474-0
Publikováno v:
Solid-State Electronics. 39:1087-1092
A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d0cbc374821a32bc94fe0ff42cce902
https://doi.org/10.1016/0038-1101(95)00417-3
https://doi.org/10.1016/0038-1101(95)00417-3
Autor:
Anders Hallén, Alain Brunelle, Serge Della-Negra, Y. Le Beyec, Niklas Keskitalo, Jörgen Olsson, Per Håkansson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:233-236
Silicon samples have been irradiated with cluster ions, 16.2 MeV Au4 and 23 MeV C60, from the Orsay tandem accelerator in France. After the irradiation, Schottky diodes are formed and the samples are studied with deep level transient spectroscopy. Ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab1532e1dc354e209584f999804b539
https://doi.org/10.1016/0168-583x(95)00709-1
https://doi.org/10.1016/0168-583x(95)00709-1
Autor:
J. P. Doyle, Niklas Keskitalo, Margareta K. Linnarsson, Nils Nordell, Paolo Pellegrino, Bengt Gunnar Svensson, J. L. Lindström, Adolf Schöner
Publikováno v:
Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f0d4219eb69c4e747f308b354c85f84
http://hdl.handle.net/2445/24815
http://hdl.handle.net/2445/24815
Publikováno v:
MRS Proceedings. 469
The Vacancy-Oxygen (VO) centre is one of the most prominent defects appearing in silicon after irradiation with energetic particles and gamma rays. It is formed when migrating vacancies are trapped by interstitial oxygen atoms. It gives rise to a dee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15481b6fb6834918f49d11d4160b8f9
https://doi.org/10.1557/proc-469-233
https://doi.org/10.1557/proc-469-233
Publikováno v:
Scopus-Elsevier
A new method for measuring the interface properties, using diamond terminated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon/diamond interface for two types of diamond. It was f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9dbc4f5f1c5d74f5159f6f9f48c1d2de
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031150252&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031150252&partnerID=MN8TOARS
Autor:
B. G. Svensson, S. Fatima, A. Hallén, J. Lalita, Niklas Keskitalo, P. Pellegrino, Chennupati Jagadish
Publikováno v:
Scopus-Elsevier
The temperature dependence of the so-called reverse dose rate effect for generation of vacancy-type defects in silicon has been investigated using samples implanted with 1.3 MeV protons at temperatures between 70 and 300 K. The effect is found to inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4cc15f522a282832db809c8c9c960e4
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031338327&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031338327&partnerID=MN8TOARS