Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Nikita Yu Gordeev"'
Autor:
Mikhail V. Maximov, Nikita Yu. Gordeev, Yuri M. Shernyakov, Grigoriy O. Kornyshov, Artem A. Beckman, Alexey S. Payusov, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Marina M. Kulagina, Alexey E. Zhukov
Publikováno v:
Photonics, Vol 10, Iss 10, p 1090 (2023)
We study the applicability of InGaAs/GaAs quantum well-dots (QWDs) for active regions of broadband superluminescent diodes (SLDs) emitting in the 950–1150 nm spectral range; 2 mm long SLDs with a bent section and an active region based on seven chi
Externí odkaz:
https://doaj.org/article/52dec16217a74f92866751ab6b579778
Autor:
Lili Han, Zhaowei Wang, Nikita Yu. Gordeev, Mikhail V. Maximov, Xiansheng Tang, Artem A. Beckman, Grigoriy O. Kornyshov, Alexey S. Payusov, Yuri M. Shernyakov, Alexey E. Zhukov, Kuilong Li, Ruizhan Zhai, Zhongqing Jia, He Yang, Wei Zhang
Publikováno v:
Micromachines, Vol 14, Iss 6, p 1271 (2023)
Semiconductor lasers have developed rapidly with the steady growth of the global laser market. The use of semiconductor laser diodes is currently considered to be the most advanced option for achieving the optimal combination of efficiency, energy co
Externí odkaz:
https://doaj.org/article/2b185fbe6f71476db4323806aec4ed89
Autor:
Alexey E. Zhukov, Eduard I. Moiseev, Alexey M. Nadtochiy, Nikita A. Fominykh, Konstantin A. Ivanov, Ivan S. Makhov, Mikhail V. Maximov, Fedor I. Zubov, Vladimir G. Dubrovskii, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Nikita Yu Gordeev, Yuri M. Shernyakov, Natalia V. Kryzhanovskaya
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfff67064d86d122f36770b34d687b37
https://doi.org/10.1109/jqe.2022.3229300
https://doi.org/10.1109/jqe.2022.3229300
Autor:
Zhang, Lili Han, Zhaowei Wang, Nikita Yu. Gordeev, Mikhail V. Maximov, Xiansheng Tang, Artem A. Beckman, Grigoriy O. Kornyshov, Alexey S. Payusov, Yuri M. Shernyakov, Alexey E. Zhukov, Kuilong Li, Ruizhan Zhai, Zhongqing Jia, He Yang, Wei
Publikováno v:
Micromachines; Volume 14; Issue 6; Pages: 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser market. The use of semiconductor laser diodes is currently considered to be the most advanced option for achieving the optimal combination of efficiency, energy co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::d425269e12acbd10a21d296daf584d35
Autor:
Mikhail V. Maximov, Alexey M. Nadtochiy, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Nikita Yu. Gordeev, Yuriy M. Shernyakov, Alexey S. Payusov, Fedor I. Zubov, Vladimir N. Nevedomskiy, Sergei S. Rouvimov, Alexey E. Zhukov
Publikováno v:
Applied Sciences, Vol 10, Iss 3, p 1038 (2020)
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition
Externí odkaz:
https://doaj.org/article/2ac0003b686647e9ab9589c240846e75
Autor:
Nikita Yu Gordeev, Marina M Kulagina, Yuliya A Guseva, Artem A Serin, Alexey S Payusov, Grigorij O Kornyshov, Fedor I Zubov, Alexey E Zhukov, Mikhail V Maximov
Publikováno v:
Laser Physics Letters. 19:066201
An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots, promising for clock pulse generation, optical sensing, biological and medical applications, and microwave photonics, has been proposed and tested. Lasing was obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a7dcc153955b06e869ae79d9dacc30
https://doi.org/10.1088/1612-202x/ac6a62
https://doi.org/10.1088/1612-202x/ac6a62
Autor:
Nikolay A. Kalyuzhnyy, Nikita Yu. Gordeev, A. S. Payusov, A. A. Serin, M. V. Maximov, Alexey M. Nadtochiy, Sergey A. Mintairov, Yuri M. Shernyakov, Alexey E. Zhukov
Publikováno v:
Semiconductor Science and Technology. 36:015008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f484f8a32b6a6380e88f2838e551ed0
https://doi.org/10.1088/1361-6641/abc51d
https://doi.org/10.1088/1361-6641/abc51d
Autor:
Alexey E. Zhukov, Sergei Rouvimov, V.N. Nevedomskiy, Nikolay A. Kalyuzhnyy, Nikita Yu. Gordeev, Alexey M. Nadtochiy, M. V. Maximov, A. S. Payusov, Sergey A. Mintairov, F. I. Zubov, Yuriy M. Shernyakov, N. V. Kryzhanovskaya, Eduard Moiseev
Publikováno v:
Applied Sciences, Vol 10, Iss 3, p 1038 (2020)
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::798ab39e2882c4349fbed39d707af0ee
https://doi.org/10.3390/app10031038
https://doi.org/10.3390/app10031038
Autor:
Axel Hoffmann, Nikita Yu. Gordeev, Nikolay Cherkashin, S. Schlichting, Jari Lyytikäinen, Mikhail V. Maximov, Nikolay N. Ledentsov, Yu. M. Shernyakov, A. S. Payusov, V. A. Shchukin, Oleg G. Okhotnikov, Felix Nippert
Publikováno v:
SPIE OPTO 2015
SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩
SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩
We report on green (550–560 nm) electroluminescence (EL) from (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P–(Al 0.8 Ga 0.2 ) 0.5 In 0.5 P double p–i–n heterostructures with monolayer–scale tensile strained GaP insertions in the cladding layers and light–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a8fa74a1a94e7f7e33929033175d7d9
https://hal.science/hal-01736019
https://hal.science/hal-01736019
Autor:
Vitaly Shchukin, Nikita Yu. Gordeev, Y.M. Shernyakov, Ilan Samid, Mikhail V. Maximov, Nikolai N. Ledentsov, Leonid Ya. Karachinsky, Innokenty I. Novikov
Publikováno v:
physica status solidi (c). 2:919-922
We report on the lasers with a waveguide designed as a one-dimensional photonic band crystal with an irregularity (defect) to achieve low-divergence emission. Small vertical divergence less than 10o, high differential efficiency of 85% and CW output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e830740847100a25442808f1d57315
https://doi.org/10.1002/pssc.200460344
https://doi.org/10.1002/pssc.200460344