Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Nikita V. Permiakov"'
Publikováno v:
Polymer Science, Series A. 60:417-427
NSG01 industrial atomic force microscope probes were functionalized by the electrically conductive polymer, polyaniline, during in situ oxidative polymerization of aniline at the probe point, which was confirmed by scanning electron microscopy. The q
Autor:
Nikita V. Permiakov, S. V. Myakin, L. B. Matyushkin, A. A. Reshetnikova, A. O. Andronov, V. A. Moshnikov, P. K. Afonicheva
Publikováno v:
Semiconductors. 51:586-590
A technique for synthesizing gas-sensing copper-oxide layers by layer-by-layer deposition onto glass and plastic substrates is considered. Deposition is based on the oxidation of a copper–ammonia complex by hydrogen peroxide. Layers synthesized at
Autor:
E V Maraeva, Nikita V. Permiakov
Publikováno v:
2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).
The work is aimed to the study of materials based on lead selenide PbSe obtained by chemical bath deposition from aqueous solutions. The layers are studied with atomic force microscopy (topography and local current-voltage characteristics) and Raman
Publikováno v:
2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).
The work is aimed to the study of materials based on indium sulphide In 2 S 3 obtained by chemical bath deposition from aqueous solutions. The layers are studied by optical, atomic force microscopy, Raman spectroscopy, nitrogen thermal desorption. Th
Publikováno v:
2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus).
The original idea is to deposit metal layers from concentrated solutions of colloidal inks of metal nanoparticles (silver) in a programmable pattern using methods of modified 3D extrusion with syringe dispenser, followed by thermal and electrodiffusi
Autor:
Yulia Spivak, Alexander I. Maximov, V. A. Moshnikov, Natalia A. Lashkova, Nikita V. Permiakov
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics. 1:15-23
The features of the current–voltage ( I – V ) measurements in local regions of semiconductor nanostructures by conductive atomic force microscopy (AFM) are discussed. The standard procedure of I – V measurements in conductive AFM leads not infr
Autor:
I A Lamkin, Sergey A. Tarasov, A V Solomonov, V. A. Moshnikov, Nikita V. Permiakov, A S Evseenkov
Publikováno v:
2017 11th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMCCompo).
The article presents the options combination of etching and atomic force microscopy for research work and the failed high electron mobility transistors, as well as in the conduct of the capacitance-voltage profiling.
Publikováno v:
2015 International Conference "Stability and Control Processes" in Memory of V.I. Zubov (SCP).
Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup fo