Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nikita Shandyba"'
Autor:
Sergey Balakirev, Danil Kirichenko, Natalia Chernenko, Nikita Shandyba, Sergey Komarov, Anna Dragunova, Natalia Kryzhanovskaya, Alexey Zhukov, Maxim Solodovnik
Publikováno v:
Crystals, Vol 13, Iss 9, p 1358 (2023)
In this paper, for the first time, we report a strong effect of the arsenic pressure used for the high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A 140 nm red shift of the photoluminescence peak position is obs
Externí odkaz:
https://doaj.org/article/491ad501b51c4630b435c669feaaef6e
Autor:
Nikita Shandyba, Sergey Balakirev, Vladislav Sharov, Natalia Chernenko, Danil Kirichenko, Maxim Solodovnik
Publikováno v:
International Journal of Molecular Sciences, Vol 24, Iss 1, p 224 (2022)
This paper presents the results of experimental studies of the effect of Si(111) surface modification by Ga-focused ion beam (FIB) at 30 kV accelerating voltage on the features of the epitaxial GaAs nanowire (NW) growth processes. We experimentally e
Externí odkaz:
https://doaj.org/article/1161c24f737f499188e4eb07aa16dbdd
Autor:
Mikhail Eremenko, Nikita Shandyba, Natalia Chernenko, Sergey Balakirev, Maxim Solodovnik, Oleg Ageev
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3deda372824a36349daa6c9d83cb4fe3
https://doi.org/10.1117/12.2624404
https://doi.org/10.1117/12.2624404
Autor:
Sergey Balakirev, Natalia Chernenko, Natalia Kryzhanovskaya, Nikita Shandyba, Danil Kirichenko, Anna Dragunova, Sergey Komarov, Alexey Zhukov, Maxim Solodovnik
Publikováno v:
Electronics; Volume 11; Issue 23; Pages: 4062
We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single bro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aeb8b94739d8c3c3c728446e273af7e8
https://doi.org/10.3390/electronics11234062
https://doi.org/10.3390/electronics11234062