Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Nikhil Satyala"'
Publikováno v:
Acta Materialia. 74:141-150
Thermal fatigue and mechanical failure are two challenging aspects of thermoelectric (TE) module design and fabrication. Among the well-known TE materials with high conversion efficiencies are various brittle semiconductors or ceramics. However, form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4f93a2f202a9d8faff555c4136902e
https://doi.org/10.1016/j.actamat.2014.04.007
https://doi.org/10.1016/j.actamat.2014.04.007
Autor:
Nikhil Satyala, Daryoosh Vashaee
Publikováno v:
Journal of Electronic Materials. 41:1785-1791
Thermoelectric (TE) materials based on alloys of magnesium (Mg) and silicon (Si) possess favorable properties such as high electrical conductivity and low thermal conductivity. Additionally, their abundance in nature and lack of toxicity make them ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3ebb97a4e33f6f6b2d1dc6629d0b00
https://doi.org/10.1007/s11664-012-2024-7
https://doi.org/10.1007/s11664-012-2024-7
Autor:
Duo Mao, Wudyalew Wondmagegn, S. Gowrisanker, Ronald J. Pieper, H. J. Stiegler, I. Mejia-Silva, Manuel Quevedo-Lopez, Nikhil Satyala, Bruce E. Gnade, Husam N. Alshareef
Publikováno v:
Thin Solid Films. 519:4313-4318
The capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numeric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7320b910d40d1f74e25be4011c0b26d8
https://doi.org/10.1016/j.tsf.2011.02.014
https://doi.org/10.1016/j.tsf.2011.02.014
Autor:
Wudyalew Wondmagegn, Eric Forsythe, Nikhil Satyala, Ronald J. Pieper, Bruce E. Gnade, H. J. Stiegler, Manuel Quevedo-Lopez
Publikováno v:
Thin Solid Films. 519:1943-1949
In this work a simulation based comparative study of organic field effect transistors designed using standard lithographic and printing designs is presented. The device simulations were performed using two-dimensional drift-diffusion equations with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cedd6c808af208043e7c2d7c4687b72
https://doi.org/10.1016/j.tsf.2010.10.020
https://doi.org/10.1016/j.tsf.2010.10.020
Autor:
Wudyalew Wondmagegn, S. Gowrisanker, H. J. Stiegler, Husam N. Alshareef, Manuel Quevedo-Lopez, Ronald J. Pieper, Nikhil Satyala, Bruce E. Gnade
Publikováno v:
Journal of Computational Electronics. 10:144-153
The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation takin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d725e6d0a98c67b1f4ba06d74ad1323d
https://doi.org/10.1007/s10825-010-0311-1
https://doi.org/10.1007/s10825-010-0311-1
Publikováno v:
Lecture Notes in Nanoscale Science and Technology ISBN: 9783319020112
The beneficial effects of nanostructured material systems have provided a significant momentum to accomplish high-efficiency thermoelectric materials for power generation and cooling applications. The quantum size effects have been widely explored in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d58022bf6002715c3eaf4c50355677
https://doi.org/10.1007/978-3-319-02012-9_4
https://doi.org/10.1007/978-3-319-02012-9_4
Publikováno v:
2012 IEEE Green Technologies Conference.
The thermoelectric (TE) properties of magnesium silicide (Mg2Si) fabricated through mechanical alloying and hot-pressing have been characterized by measurements of electrical resistivity (ρ), Seebeck coefficient (S) and thermal conductivity (κ) bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91d77d62f64a85f2b95d6dbaaafcf5d9
https://doi.org/10.1109/green.2012.6200960
https://doi.org/10.1109/green.2012.6200960
Publikováno v:
2011 Proceedings of IEEE Southeastcon.
Based on the numerical model and the analytical expression developed in our previous work, the location of Fermi level in an organic semiconductor is determined using charge neutrality principle. As in our previous work, a pentacene based Organic Sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b52b29fde04fca6abcc5fb7f03581b7
https://doi.org/10.1109/secon.2011.5752937
https://doi.org/10.1109/secon.2011.5752937
Publikováno v:
2011 Proceedings of IEEE Southeastcon.
We present a modeling and simulation based study for the polarization hysteresis of ferroelectric polymers. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a957d918cff725ed625f85f1ee9044ea
https://doi.org/10.1109/secon.2011.5752938
https://doi.org/10.1109/secon.2011.5752938
Publikováno v:
2010 42nd Southeastern Symposium on System Theory (SSST 2010).
The fundamental aspects of trap analysis in charge transport of organic semiconductors are reviewed by focusing on the role of traps in I-V characteristics of an organic Schottky diode. A p-type organic semiconductor based device is considered and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237e27ac5289a4a968267c16cdbf32c7
https://doi.org/10.1109/ssst.2010.5442829
https://doi.org/10.1109/ssst.2010.5442829