Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Nikhil Rangaraju"'
Publikováno v:
IEEE Transactions on Electron Devices. 62:2470-2474
Previously, the p-n-p bipolar magnetic junction transistor was demonstrated using a magnetic semiconductor InMnAs as the collector. A current gain $\beta _{\text {dc}}$ as high as 20 of the transistor is observed at 300 K. A negative magnetoamplifica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3844562f5082aa319ba479bbf83dd7d6
https://doi.org/10.1109/ted.2015.2446956
https://doi.org/10.1109/ted.2015.2446956
Publikováno v:
IEEE Transactions on Nanotechnology. 11:1026-1032
While most modern computing technologies utilize Si complementary metal-oxide-semiconductor (CMOS) transistors and the accompanying CMOS logic family, alternative devices and logic families exhibit significant performance advantages. Though heretofor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff7cdbaa6dad1e2254fb6a8a2beae4e
https://doi.org/10.1109/tnano.2012.2211892
https://doi.org/10.1109/tnano.2012.2211892
Publikováno v:
2015 IEEE Workshop on Microelectronics and Electron Devices (WMED).
The effect of multiple Si processes on the intrinsic sheet resistance of CoSi2 resistors is investigated in this article. It is discovered that CoSi2 intrinsic sheet resistance is not a simple function of the CoSi thickness, but rather depends on man
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a878256260e29ea5a8c55a4f58b21c56
https://doi.org/10.1109/wmed.2015.7093687
https://doi.org/10.1109/wmed.2015.7093687
Effect of cryo-rolling and annealing on microstructure and properties of commercially pure aluminium
Publikováno v:
Materials Science and Engineering: A. 398:246-251
Influence of cryo-rolling reduction and annealing of commercially pure (CP) Al is evaluated in four aspects: microstructure, mechanical properties, electrical conductivity and general corrosion. It is shown that by selecting optimal cryo-rolling redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8dde9b996fc61d9931db89a05ff3d40
https://doi.org/10.1016/j.msea.2005.03.026
https://doi.org/10.1016/j.msea.2005.03.026
Publikováno v:
ACM Great Lakes Symposium on VLSI
Electronic computing relies on systematically controlling the flow of electrons to perform logical functions. Various technologies and logic families are used in modern computing, each with its own tradeoffs. In particular, diode logic allows for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c811f89e825ea978cc8510e857adcdf
https://doi.org/10.1145/2206781.2206833
https://doi.org/10.1145/2206781.2206833
Publikováno v:
Physical Review B. 82
We report on the magnetotransport properties of epitaxial thin films of ${\text{In}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{Sb}$ dilute magnetic semiconductor grown by metal-organic vapor-phase epitaxy. At temperatures below 10 K, a negative magnetor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9082f4d0c09487e6f3985c5055398a5e
https://doi.org/10.1103/physrevb.82.205207
https://doi.org/10.1103/physrevb.82.205207
Publikováno v:
Physical Review Letters. 105
We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fa4c974a1e8310dbe4b578da154d893
https://doi.org/10.1103/physrevlett.105.117202
https://doi.org/10.1103/physrevlett.105.117202
Publikováno v:
Physical Review B. 81
We report ferromagnetism in single phase, epitaxial ${\text{In}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{Sb}$ alloy films, with $x\ensuremath{\le}0.035$, grown by metalorganic vapor phase epitaxy. The alloy films exhibit well-defined magnetization ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb93a150119a0991e3dcdb24c3826ae
https://doi.org/10.1103/physrevb.81.115321
https://doi.org/10.1103/physrevb.81.115321
Publikováno v:
Physical Review B. 79
The giant magnetoresistance characteristics of magnetic III--V semiconductor $p\text{\ensuremath{-}}n$ heterojunctions are described. The origin of the extremely large positive magnetoresistance (2680%) observed at room temperature and at a field of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::440e29c40d9f739efae02f56ad2c157e
https://doi.org/10.1103/physrevb.79.205209
https://doi.org/10.1103/physrevb.79.205209
Publikováno v:
Applied Physics Letters. 98:193506
The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25a5006b66eb8ca4e2e1a2d0c092f4fc
https://doi.org/10.1063/1.3589987
https://doi.org/10.1063/1.3589987