Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Niketa Sharma"'
Publikováno v:
Journal of Electronic Materials. 49:5687-5697
In this paper, we showcase our investigation regarding the effect of acceptor traps in GaN buffer and AlGaN barrier layers on the leakage current and current collapse in GaN high-electron-mobility transistors. The dependence of current collapse and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea4216123abf2f7ee7676c3d9deec339
https://doi.org/10.1007/s11664-020-08299-0
https://doi.org/10.1007/s11664-020-08299-0
Publikováno v:
VLSI and Hardware Implementations Using Modern Machine Learning Methods ISBN: 9781003201038
VLSI and Hardware Implementations Using Modern Machine Learning Methods
VLSI and Hardware Implementations Using Modern Machine Learning Methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b1f277b5d37c537693fc5805a1d4b0
https://doi.org/10.1201/9781003201038-9
https://doi.org/10.1201/9781003201038-9
Autor:
Kuldip Singh, Nitin Chaturvedi, Chinnamuthan Periasamy, D. K. Kharbanda, P. K. Khanna, Niketa Sharma, Shivanshu Mishra, Priyavart Parjapat, Ashok Chauhan, Nidhi Chaturvedi
Publikováno v:
IEEE Transactions on Electron Devices. 67:289-295
We have investigated the characteristics of pH and salinity sensor derived from the gated AlGaN/GaN high-electron mobility transistor (HEMT) structures in phosphate buffer saline (PBS) and aqueous salt solutions (NaCl + DI). In deionized (DI) water,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6717dd857705bb0455aef6834981d52b
https://doi.org/10.1109/ted.2019.2949821
https://doi.org/10.1109/ted.2019.2949821
Publikováno v:
Communication and Intelligent Systems ISBN: 9789811610882
In this paper, we have proposed electrothermal modeling of GaN-based HEMT devices. A data-driven approach has been implemented for a temperature range varying from 300 to 600 K, based on one of the core methods of machine learning techniques based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2a3d9c5f27f83da6e2e8069a10bcf04
https://doi.org/10.1007/978-981-16-1089-9_2
https://doi.org/10.1007/978-981-16-1089-9_2
Publikováno v:
2020 3rd International Conference on Emerging Technologies in Computer Engineering: Machine Learning and Internet of Things (ICETCE).
In this article, we have proposed a "Predictive Current Control" technique for PV fed VSI A "DC-DC Converter" has implemented with "Perturb and Observe MPPT (Maximum Power Point Tracking) algorithm". The "Predictive Current Control" is employed for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661e4e468b1363d27c34977512a92b24
https://doi.org/10.1109/icetce48199.2020.9091739
https://doi.org/10.1109/icetce48199.2020.9091739
Publikováno v:
Materials Science in Semiconductor Processing. 87:195-201
This work investigates the Ar+/N+ based ion implantation and Ar based reactive ion etching (RIE) techniques for device isolation. A comparison of ion implantation technique with three ion energies (20/35/65 keV) and 4 energies (20/35/65/160 keV) of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b356e1e554a5c0c1e0bcb005af8ebb
https://doi.org/10.1016/j.mssp.2018.05.015
https://doi.org/10.1016/j.mssp.2018.05.015
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:4580-4587
In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ee9392be600db61850530159760e551
https://doi.org/10.1166/jnn.2018.15350
https://doi.org/10.1166/jnn.2018.15350
Publikováno v:
Superlattices and Microstructures. 111:922-926
In this paper, we address the Ohmic contacts comparison and optimization on both thin (18 nm) and thick (25 nm) AlGaN/GaN HEMTs structures. In the conventional metallization scheme of Ti/Al/Ti/Au, several stacks based on Ni, Cr, and Pt metals replaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9b8bffeca36a40cd6b442c9665c63b
https://doi.org/10.1016/j.spmi.2017.03.060
https://doi.org/10.1016/j.spmi.2017.03.060
Publikováno v:
A TWO-DAY CONFERENCE ON FLEXIBLE ELECTRONICS FOR ELECTRIC VEHICLES.
One-third of total carbon footprint in the world is being caused by conventional combustion-based transportation system. To reduce these carbon footprints various renewable energy sources-based transportation mechanism is innovated with less maintena
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a864bd2580c51b7c3daa04141076d5fe
https://doi.org/10.1063/5.0031314
https://doi.org/10.1063/5.0031314
Autor:
Arvind K. Singh, Surojit Pande, Ashok Chauhan, Nidhi Chaturvedi, Kuldip Singh, Prateek Kothari, Ramakant Sharma, Nitin Chaturvedi, Niketa Sharma, Rajdeep Chowdhury, Priyavart Parjapat, Shivanshu Mishra
Publikováno v:
Semiconductor Science and Technology. 36:045018
This work reports on the development of a compact GaN high-electron-mobility transistor (HEMT) based biosensor for an easy and early detection of breast cancer biomarker C-erbB2 in the human cell line. The early-stage detection process includes a rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e85d296622ac732b0b95a6aeb92917
https://doi.org/10.1088/1361-6641/abe83e
https://doi.org/10.1088/1361-6641/abe83e