Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Nigel R. Farrar"'
Publikováno v:
aot. 1:279-287
Extreme ultraviolet (EUV) lithography has emerged as the preferred choice for high-volume manufacturing, now that immersion ArF reaches its limits. Light source power is a key driver to achieve the throughput required for successful adoption of extre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f5a1d6a6b18f9c27d6428e283318401
https://doi.org/10.1515/aot-2012-0125
https://doi.org/10.1515/aot-2012-0125
Publikováno v:
ECS Transactions. 27:461-466
Laser produced plasma (LPP) EUV systems have been considered as a viable and scalable approach for the EUV scanners at sub-32nm and beyond nodes on the ITRS roadmap. High EUV power and reduction of chamber contaminations inside EUV vacuum chambers or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::709d4d9dbe0fa9f1db2ec22751fa7434
https://doi.org/10.1149/1.3360660
https://doi.org/10.1149/1.3360660
Autor:
Nigel R. Farrar, Daniel J. W. Brown
Publikováno v:
Laser Technik Journal. 6:40-43
Moore's Law, which predicts thecontinued increase in device density onintegrated circuits, has been driven by advancesin lithography. Both resolutionand productivity of the exposure toolhave been enabled by the light sourcetechnology. The transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976cda520ec2793cc5d988c4d8fbb7e2
https://doi.org/10.1002/latj.200990058
https://doi.org/10.1002/latj.200990058
Autor:
William N. Partlo, Georgiy O. Vaschenko, Christopher P. Chrobak, David W. Myers, Oleh V. Khodykin, Alexander N. Bykanov, Alex I. Ershov, Nigel R. Farrar, Norbert R. Bowering, Igor V. Fomenkov, David C. Brandt, Jerzy R. Hoffman
Publikováno v:
Microelectronic Engineering. 86:509-512
This paper describes the development of a LPP EUV source using a CO"2 laser with tin droplet targets. Burst power of 100W and average power of 25W has been achieved. Collector mirrors have been fabricated with >50% reflectivity and show stable EUV im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65696a238bff037911518997b70126ae
https://doi.org/10.1016/j.mee.2008.10.020
https://doi.org/10.1016/j.mee.2008.10.020
Publikováno v:
ECS Transactions. 18:391-396
Extreme ultra-violet (EUV) lithography is considered to be the most viable candidate to replace DUV to fulfill Moore's Law for 22nm generation and beyond. In this manuscript, we will show that LPP is the preferred choice for high volume manufacturing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c7374b5ec693a44daa352ad982346c
https://doi.org/10.1149/1.3096476
https://doi.org/10.1149/1.3096476
Autor:
Oleg Kritsun, Bruno La Fontaine, Bill Partlo, Harry J. Levinson, Slava Rokitski, Ivan Lalovic, Nigel R. Farrar
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2145-2150
In this article the authors discuss the impact of coherence, or laser speckle, of current generation 193nm argon fluoride (ArF) excimer sources on lithographic patterning. They report a new metrology capability to characterize single-pulse speckle pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d310854bd807171bf5f11bd85a1d9989
https://doi.org/10.1116/1.2992027
https://doi.org/10.1116/1.2992027
Autor:
Daniel J. Riggs, Rick Sandstrom, Slava Rokitski, Igor V. Fomenkov, Yezheng Tao, Rob Rafac, Christian Wagner, Norbert R. Bowering, Wayne J. Dunstan, Georgiy O. Vaschenko, Noreen Harned, Ron Kool, Hans Meiling, Alexander Schafgans, Alberto Pirati, Matthew J. Graham, Nigel R. Farrar, Daniel J. W. Brown, David C. Brandt, Michael Purvis, Alex I. Ershov
Publikováno v:
SPIE Proceedings.
This paper describes the development and evolution of the critical architecture for a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing (HVM). In this paper we discuss the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13193246557204944c3f3c3abbfa1a0b
https://doi.org/10.1117/12.2087421
https://doi.org/10.1117/12.2087421
Autor:
Christian Wagner, Jo Finders, Milos Popadic, Sjoerd Lok, Koen de Peuter, Arthur Winfried Eduardus Minnaert, Rudy Peeters, Nigel R. Farrar, Chris de Ruijter, Roderik van Es, Alexander Schafgans, Daniel J. W. Brown, Ron Kool, Noreen Harned, Herman Boom, Eelco van Setten, Jörg Mallmann, Martin Lin, Martijn van Noordenburg, Daniel Smith, Frank Y. S. Chuang, Alberto Pirati, Roger Huang, Marcel Beckers, Judon Stoeldraijer, David C. Brandt, Carmen Zoldesi, Hans Meiling
Publikováno v:
SPIE Proceedings.
Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dac5fa09e9788067c5cca348cec8956
https://doi.org/10.1117/12.2085912
https://doi.org/10.1117/12.2085912
Autor:
Nigel R. Farrar, David C. Brandt, Rudy Peeters, David W. Myers, Daniel J. W. Brown, Robert J. Rafac, Norbert R. Bowering, Robert Kazinczi, Daniel Smith, Noreen Harned, Silvia De Dea, Daniel J. Riggs, Bruno La Fontaine, Igor V. Fomenkov, Michael Purvis, Alex I. Ershov, Hans Meiling, Alberto Pirati
Publikováno v:
SPIE Proceedings.
This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967e9963b064ddf8ddc1892a39d637c9
https://doi.org/10.1117/12.2048195
https://doi.org/10.1117/12.2048195
Autor:
Rudy Peeters, Silvia De Dea, David C. Brandt, Robert J. Rafac, Daniel J. W. Brown, Daniel J. Riggs, Norbert R. Bowering, Alex I. Ershov, Hans Meiling, Robert Kazinczi, Alberto Pirati, David W. Myers, Noreen Harned, Daniel Smith, Igor V. Fomenkov, Bruno La Fontaine, Nigel R. Farrar
Publikováno v:
SPIE Proceedings.
Laser produced plasma (LPP) light sources have been developed as the primary approach for EUV scanner imaging of circuit features in sub-20nm devices in high volume manufacturing (HVM). This paper provides a review of development progress and readine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf99cb6d010e287e3e3289fa0d683460
https://doi.org/10.1117/12.2048184
https://doi.org/10.1117/12.2048184