Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Nigel D. Young"'
Autor:
Alastair James Sloan, Rachel J. Waddington, Amr Alraies, Carl Glasse, Jeremy Simon Rees, David K. Cole, Nigel D. Young
Objectives\ud \ud Dietary stains can be adsorbed into the dentin of teeth. Using Orange II as a model dietary stain, this study investigated the strength of its interaction with the mineral and protein components of dentin matrix and how hydrogen per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860e391ec67e6e0c75cf3013fd1b3c78
Autor:
J. Gwyer, Lutz-Christian Gerhardt, Nigel D. Young, Steven Ernest Franklin, V. Mohan, Shishir Mundra
Publikováno v:
Tribology International. 89:109-118
A possible problem with peroxide based tooth whitening is the loss of tooth hardness and higher susceptibility to enamel surface wear. This study focussed on the effects of acidic and neutral hydrogen peroxide solutions (6 and 30% w/v) on hardness, f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07618aaaf30c3ea814cf83bf748b691
https://doi.org/10.1016/j.triboint.2014.12.024
https://doi.org/10.1016/j.triboint.2014.12.024
Publikováno v:
IEEE Transactions on Electron Devices. 59:2180-2186
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high-performance analog circuits fabricated in thin-film technologies. The quality of saturation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ab1ea5cb3b2fc5ccf38932634a9d35a
https://doi.org/10.1109/ted.2012.2198823
https://doi.org/10.1109/ted.2012.2198823
Autor:
Nigel D. Young, Xiaojun Guo, John M. Shannon, Michael J. Trainor, S. R. P. Silva, Radu A. Sporea
Publikováno v:
Solid-State Electronics. :246-249
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The structures enable a direct comparison to be made between a SGT and a standard thin-film field-effect transistor (FET) on the same device. SGTs having exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f08c7c570422cf4b296cab0b0d9409f5
https://doi.org/10.1016/j.sse.2011.06.010
https://doi.org/10.1016/j.sse.2011.06.010
Autor:
Wen-Sheng Chang, Nigel D. Young, Kakkad Ramesh, Fumirou Matsuki, Keiichi Sano, Fu-Yuan Hsueh, Martin John Edwards, J. Richard Ayres, Kazuyuki Hashimoto
Publikováno v:
IEICE Transactions on Electronics. :1583-1589
Ambient light sensors have been used to reduce power consumption of Active Matrix Liquid Crystal Displays (AMLCD) adjusting display brightness depending on ambient illumination. Discrete sensors have been commonly used for this purpose. They make mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5614ff5096aa8e89b27553a5f4ebbd33
https://doi.org/10.1587/transele.e93.c.1583
https://doi.org/10.1587/transele.e93.c.1583
Publikováno v:
IEEE Transactions on Electron Devices. 55:1109-1115
The performance and stability of thin-film transistors with zinc oxide as the channel layer are investigated using gate bias stress. It is found that the effective channel mobility, ON/OFF ratio, and subthreshold slope of the devices that incorporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2e0797734301aeb23a665e76b948dfc
https://doi.org/10.1109/ted.2008.918662
https://doi.org/10.1109/ted.2008.918662
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::817e1cabcb41c5052e746f9565cacad2
https://surrey.eprints-hosting.org/807784/
https://surrey.eprints-hosting.org/807784/
Autor:
Andrew Steer, Wouter Oepts, Herbert Lifka, David S George, David A. Fish, Andrea Giraldo, Steven C. Deane, Nigel D. Young, Nicola Bramante
Publikováno v:
ECS Transactions. 3:23-33
Optical feedback pixel circuits for a-Si:H and LTPS technologies will be presented. The circuits enable correction of threshold voltage drift of the drive TFT and degradation of the OLED. In the a-Si:H case this is achieved with a standard a- Si:H pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b0fbdf3c20d57eb035e4bc904023816
https://doi.org/10.1149/1.2356331
https://doi.org/10.1149/1.2356331
Publikováno v:
IEEE Transactions on Electron Devices. 48:1145-1151
We report results on thin-film transistors (TFTs) made from a new hybrid process in which amorphous silicon (a-Si) is first converted to polycrystalline silicon (poly-Si) using Ni-metal-induced lateral crystallization (MILC), and then improved using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c7a12430ac59a40d0d83aaf101a4c5
https://doi.org/10.1109/16.925240
https://doi.org/10.1109/16.925240
Autor:
Nigel D. Young
Publikováno v:
IEEE Transactions on Electron Devices. 43:450-456
The device characteristics of poly-Si TFTs, MOSFETs and SOI devices have been compared before and after hot-carrier-stressing, and subsequent annealing. It is found that the same types of degradation are seen for all of the different types of device,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d865ea7f9999ac656a3bf1b3d5be58f
https://doi.org/10.1109/16.485660
https://doi.org/10.1109/16.485660