Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Nien Tze Yeh"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:R229-R233
This paper reports a new method to reduce threading dislocation density in GaN epilayers grown on (111) Si substrates by metalorganic chemical vapor deposition. This method utilizes an insitu SiNx mask to produce a self-assembled double-island struct
Autor:
Wen Yen Chen, Pei Chin Chiu, Wen-Jeng Ho, Jen-Inn Chyi, Hsiang Szu Chang, Tung Po Hsieh, Wen-Hao Chang, Nien Tze Yeh, Tzu Min Hsu
Publikováno v:
Nanotechnology. 17:512-515
We report the preparation of low density self-assembled InGaAs on GaAs grown by metal–organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total cov
Publikováno v:
Infrared Physics & Technology. 46:249-256
A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8–12 μm spectral window was introduced. The top stack was made up of 8 periods of In0.5Ga0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs
Publikováno v:
Journal of Crystal Growth. 264:128-133
In this paper, we investigate the effects of growth temperature and growth rate on the formation of InAs/GaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition. These QDs are formed with large InAs coverage (3.0 MLs) and periodic gro
Publikováno v:
Journal of Crystal Growth. :1044-1048
The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs qu
Publikováno v:
physica status solidi (b). 224:85-88
We report investigations of the carrier escape from InAs self-assembled quantum dots. Based on measurements of the temperature-dependent photocurrent, the escape of photoexcited carriers is found to be dominated by the hole escape process. The main p
Publikováno v:
Physical Review B. 62:13040-13047
We presented capacitance-voltage characteristics and electron-filling reflectance measurements to investigate electron distribution in ${\mathrm{In}}_{0.5}{\mathrm{Ga}}_{0.5}\mathrm{As}$ self-assembled quantum dot ensemble. First, the electronic stru
Autor:
S. L. Hsu, Tzer-En Nee, C. C. Huang, C. Y. Lai, Jen-Inn Chyi, Nien Tze Yeh, Tzu-Min Hsu, Wen-Hao Chang
Publikováno v:
Physical Review B. 62:6959-6962
We present a temperature- and bias-dependent photocurrent study of the excitonic interband transitions of InAs self-assembled quantum dots (QD's). It was found that the carrier escape process from QD's is dominated by hole escape processes. The main
Publikováno v:
Physical Review B. 60:R2189-R2192
We present some observations of electron-filling modulation reflectance in charged self-assembled InxGa12xAs quantum dots. This electron-filling modulation reflectance is a different type of electroreflectance, which is based on the Pauli blocking of