Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Niemat Moultif"'
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 2, Iss , Pp 100062- (2022)
This paper reports an evaluation of time to failure (TTF) of GaN transistors for 5G and RADAR applications. The TTF on Arrhenius curves are extrapolated from performed RF pulsed life tests with different input powers and duty cycles. The paper explai
Externí odkaz:
https://doaj.org/article/97449a96f61a4939adecd7ade3123900
Autor:
Rosine Coq Germanicus, Wadia Jouha, Niemat Moultif, Peter De Wolf, Vishal A. Shah, Peter. M Gammon, Ulrike Luders, Olivier Latry
Publikováno v:
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Sep 2022, Coventry, France. pp.1-6, ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Sep 2022, Coventry, France. pp.1-6, ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
Precise and accurate electrical characterization of power electronics device die structures at the wafer level is essential to compare device operation to the design and to model reliability issues. In this paper, a parametric analysis for local elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87937847d1cab9a8b2fbd9151db53342
https://doi.org/10.1109/wipdaeurope55971.2022.9936397
https://doi.org/10.1109/wipdaeurope55971.2022.9936397
Autor:
Rosine Coq Germanicus, Kimmo Niskanen, Alain Michez, Niemat Moultif, Wadia Jouha, Olivier Latry, Jerôme Boch, Ulrike Lüders, Antoine D. Touboul
Publikováno v:
Materials Science Forum
Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩
Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩
International audience; Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d851d3474f2fe0700f09f45450f4159
https://hal.science/hal-03702520
https://hal.science/hal-03702520
Publikováno v:
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
This paper presents a method based on IV pulsed characterizations to estimate the junction temperature of AlGaN/GaN high-electron mobility transistors (AlGaN/GaN HEMTs). This technique allows a 2D plan evaluation of the average temperature of the tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3440ddb0bd2699681485b4d50fa3764
https://doi.org/10.1109/tdmr.2019.2950091
https://doi.org/10.1109/tdmr.2019.2950091
Autor:
Eric Joubert, Niemat Moultif, Christian Moreau, Olivier Latry, Jean-Francois Goupy, Mohamed Ndiaye, Patrick Carton
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩
This article reports a reliability study on AlGaN/GaN high-electron-mobility transistors under the RF stress. It shows a stabilization of the gate contact after the aging test. However, the degradation of RF performances and dc parameters is noticed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b6df7930b77971edbfe78e70a65c570
https://hal-normandie-univ.archives-ouvertes.fr/hal-03174499
https://hal-normandie-univ.archives-ouvertes.fr/hal-03174499
Autor:
Florent Lallemand, Niemat Moultif, Hugues Murray, Catherine Bunel, Daniel Chateigner, Rosine Coq Germanicus, Wadia Jouha, Arnaud Fouchet, Olivier Latry, Ulrike Lüders
Publikováno v:
Nano Express
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of local cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f2404c51cf9f15ba564e2d8404cc01
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdf
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdf
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Microelectronics Reliability, Elsevier, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩
This paper reports a reliability study on two technologies of AlGaN/GaN high-electron mobility transistors (AlGaN/GaN HEMTs) (Device “A” and Device “B”). A failure analysis study is conducted on devices stressed under real operating condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d52a055ce512a152e1062c56fb4a358f
https://doi.org/10.1016/j.microrel.2021.114295
https://doi.org/10.1016/j.microrel.2021.114295
Publikováno v:
Engineering Failure Analysis
Engineering Failure Analysis, Elsevier, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Engineering Failure Analysis, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Engineering Failure Analysis, Elsevier, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Engineering Failure Analysis, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩
This paper presents a reliability study of an AlGaN/GaN high electron mobility transistor (HEMT) by the photon emission (PE) and the spectral photon emission (SPE) techniques. The backside PE analysis of the studied AlGaN/GaN HEMT identifies PE signa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee5a6683fd2c2c3d5b31f7e54fa93222
https://doi.org/10.1016/j.engfailanal.2017.07.014
https://doi.org/10.1016/j.engfailanal.2017.07.014
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.243-248. ⟨10.1016/j.microrel.2017.07.013⟩
Microelectronics Reliability, 2017, 76-77, pp.243-248. ⟨10.1016/j.microrel.2017.07.013⟩
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.243-248. ⟨10.1016/j.microrel.2017.07.013⟩
Microelectronics Reliability, 2017, 76-77, pp.243-248. ⟨10.1016/j.microrel.2017.07.013⟩
This paper presents a reliability study of a 1.2 kV SiC MOSFET under HTRB (High Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon emission (SPE) techniques. The electrical characteristics analysis suggests failures r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aa83ec283e453bcfb99ccafa6b0e3d7
https://hal.archives-ouvertes.fr/hal-01765955
https://hal.archives-ouvertes.fr/hal-01765955
Publikováno v:
Reliability of High-Power Mechatronic Systems 2
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Reliability of High-Power Mechatronic Systems 2Aerospace and Automotive Applications Issues, Testing and Analysis
Reliability of High-Power Mechatronic Systems 2Aerospace and Automotive Applications Issues, Testing and Analysis, Elsevier, pp.155-197, 2017
Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩
Reliability of High-Power Mechatronic Systems 2Aerospace and Automotive Applications Issues, Testing and Analysis
Reliability of High-Power Mechatronic Systems 2Aerospace and Automotive Applications Issues, Testing and Analysis, Elsevier, pp.155-197, 2017
Silicon (Si) and silicon carbide (SiC) MOSFET transistors have multiple weak points, resulting in multiple failure modes and mechanisms. To study the reliability of these transistors using the non-destructive technique described in Chapter 8, the app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ca2fec7c2b2ff001fffa1071019948a
https://doi.org/10.1016/b978-1-78548-261-8.50005-x
https://doi.org/10.1016/b978-1-78548-261-8.50005-x