Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Niebelschütz, F."'
Autor:
Tonisch, K., Jatal, W., Niebelschuetz, F., Romanus, H., Baumann, U., Schwierz, F., Pezoldt, J.
Publikováno v:
In Thin Solid Films 2011 520(1):491-496
Autor:
Cimalla, V., Niebelschütz, F., Tonisch, K., Foerster, Ch., Brueckner, K., Cimalla, I., Friedrich, T., Pezoldt, J., Stephan, R., Hein, M., Ambacher, O.
Publikováno v:
In Sensors & Actuators: B. Chemical 2007 126(1):24-34
Autor:
Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., Ambacher, O., Goldhahn, R.
Publikováno v:
Journal of Applied Physics; Oct2008, Vol. 104 Issue 8, p084516, 8p, 1 Diagram, 5 Charts, 8 Graphs
Autor:
Lebedev, V., Tonisch, K., Niebelschütz, F., Cimalla, V., Cengher, D., Cimalla, I., Mauder, Ch., Hauguth, S., Ambacher, O., Morales, F. M., Lozano, J. G., González, D.
Publikováno v:
Journal of Applied Physics; 3/1/2007, Vol. 101 Issue 5, p054906-N.Pag, 12p, 10 Diagrams, 1 Chart, 1 Graph
Autor:
Brueckner, K., Niebelschütz, F., Tonisch, K., Foerster, C., Cimalla, V., Stephan, R., Pezoldt, J., Stauden, T., Ambacher, O., Hein, M.A.
Wide-bandgap semiconductors represent an attractive option to meet the increasing demands of micro- and nano-electromechanical systems (MEMS/NEMS) by offering new functionalities, high stability, biocompatibility and the potential for miniaturization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::96817d7fdb4f3c11fe95082fad63aa3c
https://publica.fraunhofer.de/handle/publica/224279
https://publica.fraunhofer.de/handle/publica/224279
Autor:
Niebelschütz, F., Brueckner, K., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., Hein, M.A.
In this work we present a novel concept of piezoelectrically actuated MEMS resonators based on AlGaN/GaNheterostructures. The 2DEG, which is confined at the AlGaN/GaN interface, serves as back electrode for piezoelectric actuation and read-out. Using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::35bb201a5b510f5c209af54285ffaa3a
https://publica.fraunhofer.de/handle/publica/222129
https://publica.fraunhofer.de/handle/publica/222129
The elastic properties of metallic and semiconducting nanowires were analyzed by different techniques employing static and dynamic loads. The reliability of the methods is verified by analyzing well defined microstructures and a good agreement for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::8647abb308e11bc0d59da20b4b92b495
https://publica.fraunhofer.de/handle/publica/222552
https://publica.fraunhofer.de/handle/publica/222552
Autor:
Buchheim, C., Goldhahn, R., Gobsch, G., Tonisch, K., Cimalla, V., Niebelschütz, F., Ambacher, O.
Ga-face GaN/AlGaN/GaN heterostructures with different cap thicknesses are investigated by electroreflectance spectroscopy (ER). The voltage dependent electric field strengths of the barrier and cap layers are determined. The AlGaN electric field amou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::8024f574318eeb521f38d507c46f0c98
https://publica.fraunhofer.de/handle/publica/215323
https://publica.fraunhofer.de/handle/publica/215323
Autor:
As, D.J., Tschumak, E., Niebelschütz, F., Jatal, W., Pezoldt, J., Granzner, R., Schwierz, F., Lischka, K.
Publikováno v:
MRS Online Proceedings Library; 2009, Vol. 1202 Issue 1, p1-6, 6p
Akademický článek
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