Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Nie-Chuan Chen"'
Autor:
Nie-Chuan Chen, 陳乃權
82
In this thesis we try to use vHs model to explain some physical properties of high temperature superconductor. First we study the chemical potential difference between normal state and superconducting state. It shows that the difference can b
In this thesis we try to use vHs model to explain some physical properties of high temperature superconductor. First we study the chemical potential difference between normal state and superconducting state. It shows that the difference can b
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/15677112441667887288
Publikováno v:
Nanoscience and Nanotechnology Letters. 2:315-321
The mechanical responses of GaN/AlN multilayers grown on Si(111) substrates by using the metalorganic vapor phase epitaxy (MOVPE) were investigated by combining the Berkovich nanoindentation and the cross-sectional transmission electron microscopy (X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcbfe322bc9c1dfd07cd5be2e9a29481
https://doi.org/10.1166/nnl.2010.1100
https://doi.org/10.1166/nnl.2010.1100
Publikováno v:
Journal of Crystal Growth. 311:859-862
The effects of surface state on sheet carrier density in the Al 0.17 Ga 0.83 N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×10 13 e/cm 2 . However, this value was inconsistent with the capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e5eb4b401d9989fad8a797b7d960be
https://doi.org/10.1016/j.jcrysgro.2008.09.102
https://doi.org/10.1016/j.jcrysgro.2008.09.102
Publikováno v:
Japanese Journal of Applied Physics. 47:8779-8782
The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of RT = 63.47 K/W. These data were further used to determine the evolution of the junction t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::698e672bbd2c71a16545a3ab158452f0
https://doi.org/10.1143/jjap.47.8779
https://doi.org/10.1143/jjap.47.8779
Publikováno v:
Crystal Research and Technology. 42:1276-1280
The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal-organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d44cdb4c4c28717f38973c76bc90d6
https://doi.org/10.1002/crat.200711018
https://doi.org/10.1002/crat.200711018
Publikováno v:
Japanese Journal of Applied Physics. 46:2840-2843
InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550 °C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::741773edb0aef9c99d46ece44919bdd1
https://doi.org/10.1143/jjap.46.2840
https://doi.org/10.1143/jjap.46.2840
Publikováno v:
IEEE Transactions on Electron Devices. 48:204-209
The use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied. Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f389850dae6cb95278ba8dad9862df12
https://doi.org/10.1109/16.902717
https://doi.org/10.1109/16.902717
Publikováno v:
Journal of Applied Physics. 87:1369-1373
An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6427771843350b39cb5b06f12df749da
https://doi.org/10.1063/1.372022
https://doi.org/10.1063/1.372022
Publikováno v:
Journal of Applied Physics. 87:1251-1254
The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3f7e8e65a6ce3ecf4247ad7baa5575
https://doi.org/10.1063/1.372004
https://doi.org/10.1063/1.372004
Autor:
Kung-Yu Cheng, Nie-Chuan Chen, Ya-Fen Wu, Chia-Hui Fang, Jen-Cheng Wang, Jiunn-Chyi Lee, Gwo-Mei Wu, Tzer-En Nee, Yeu-Jent Hu
Publikováno v:
Japanese Journal of Applied Physics. 47:679-681
We studied the unique correlations between the electrical and optical characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with n-AlGaN layer and n-InGaN/GaN superlattice electron tunneling layer (ETL). It was found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1527812016656c0b91acf9db26d51355
https://doi.org/10.1143/jjap.47.679
https://doi.org/10.1143/jjap.47.679