Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Nidhin Kurian"'
Autor:
Taeyoung Kim, Chandan Joishi, Zhanbo Xia, Nidhin Kurian Kalarickal, Camelia Selcu, Tyson Back, Jonathan Ludwick, Siddharth Rajan
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075119-075119-7 (2023)
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3
Externí odkaz:
https://doaj.org/article/a3768041ff5e4436a87f52123c6300e2
Autor:
Advait Gilankar, Ahmad Ehteshamul Islam, Martha R. McCartney, Abishek Katta, Nabasindhu Das, David J. Smith, Nidhin Kurian Kalarickal
Publikováno v:
Applied Physics Express, Vol 17, Iss 4, p 046501 (2024)
A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/ β -Ga _2 O _3 Schottky barrier diodes (SBDs) and NiO/ β -Ga _2 O _3 heterojunction diodes (HJ
Externí odkaz:
https://doaj.org/article/606358a47d22407eb088c28d6cb765ff
This work demonstrates high-performance vertical NiO/Ga2O3 heterojunction diodes (HJDs) with a 2-step space-modulated junction termination extension. Distinct from the current state-of-the-art Ga2O3 HJDs, we achieve breakdown voltage exceeding 3 kV w
Externí odkaz:
http://arxiv.org/abs/2409.00344
Autor:
Das, Nabasindhu, Alema, Fikadu, Brand, William, Katta, Abishek, Gilankar, Advait, Osinsky, Andrei, Kalarickal, Nidhin Kurian
In this work, we report on the anisotropic etching characteristics of \b{eta}-Ga2O3 using triethylgallium (TEGa) performed in-situ within an MOCVD chamber. At sufficiently high substrate temperature, TEGa can act as a strong etchant for \b{eta}-Ga2O3
Externí odkaz:
http://arxiv.org/abs/2408.05824
Autor:
Jared M. Johnson, Hsien-Lien Huang, Mengen Wang, Sai Mu, Joel B. Varley, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Nidhin Kurian Kalarickal, Siddharth Rajan, Hongping Zhao, Chris G. Van de Walle, Jinwoo Hwang
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051103-051103-8 (2021)
The development of novel ultra-wide bandgap (UWBG) materials requires precise understanding of the atomic level structural origins that give rise to their important properties. We study the aluminum atom incorporation, defect formation, and their rel
Externí odkaz:
https://doaj.org/article/d88fbad9ea1f470e8b81b63529f2fb07
Autor:
Dhara, Sushovan, Kalarickal, Nidhin Kurian, Dheenan, Ashok, Rahman, Sheikh Ifatur, Joishi, Chandan, Rajan, Siddharth
$\beta$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux
Externí odkaz:
http://arxiv.org/abs/2303.04870
Autor:
Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Rajan, Siddharth
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer surface had be
Externí odkaz:
http://arxiv.org/abs/2105.09503
Autor:
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F., Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics
Externí odkaz:
http://arxiv.org/abs/2006.02349
Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, Mcglone, Joe, Liu, Yumo, Moore, Wyatt, Arehart, Aaron, Ringel, Steve, Rajan, Siddharth
We report on the design and demonstration of ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface w
Externí odkaz:
http://arxiv.org/abs/1910.11521