Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage

Autor: Corso D, Aurite S, Sciacca E, Naso D, Lombardo S, Santangelo A, Nicotra MC, Cascino S

Publikováno v: Microelectronics and reliability 47 (2007): 806–809.
info:cnr-pdr/source/autori:Corso D, Aurite S, Sciacca E, Naso D, Lombardo S, Santangelo A, Nicotra MC, Cascino S/titolo:Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage/doi:/rivista:Microelectronics and reliability/anno:2007/pagina_da:806/pagina_a:809/intervallo_pagine:806–809/volume:47

In this paper, the hot carrier degradation of laterally diffused nMOSFETs is investigated in detail by the analysis of the fundamental device parameters and charge pumping measurements. Starting from this experimental characterization a new approach

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::bf4ec531306236636e68f375a652a58e
http://www.cnr.it/prodotto/i/36035

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