Zobrazeno 1 - 10
of 320
pro vyhledávání: '"Nicotra Giuseppe"'
Autor:
Campagna Elena, Talamas Simola Enrico, Venanzi Tommaso, Berkmann Fritz, Corley-Wiciak Cedric, Nicotra Giuseppe, Baldassarre Leonetta, Capellini Giovanni, Di Gaspare Luciana, Virgilio Michele, Ortolani Michele, De Seta Monica
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1793-1802 (2024)
A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics ap
Externí odkaz:
https://doaj.org/article/ec7858f2ade342178c5743bc8ccbefb7
Publikováno v:
BIO Web of Conferences, Vol 129, p 06020 (2024)
Externí odkaz:
https://doaj.org/article/5f7adffae51c443aa66dee11fa08a52a
Autor:
Nicotra Giuseppe, Sfuncia Gianfranco, Robinson W Alex, Nicholls Daniel, Wells Jack, Mio M Antonio, Bongiorno Corrado, Bottari Cettina, Adamo Salvatore, Russo Alfio, Alessandrino Santi, Browning D Nigel, Spinella Corrado
Publikováno v:
BIO Web of Conferences, Vol 129, p 24034 (2024)
Externí odkaz:
https://doaj.org/article/a8247d9852014ed892e1d935d224e70e
Autor:
Sfuncia, Gianfranco, Nicotra, Giuseppe, Giannazzo, Filippo, Pécz, Béla, Gueorguiev, Gueorgui Kostov, Kakanakova-Georgieva, Anelia
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by
Externí odkaz:
http://arxiv.org/abs/2206.10247
Autor:
Freddi, Sonia, Sfuncia, Gianfranco, Gherardi, Michele, Nicotra, Giuseppe, Barri, Chiara, Fagiani, Luca, Bouabdellaoui, Mohammed, Fedorov, Alexey, Chatain, Dominique, Sanguinetti, Stefano, Abbarchi, Marco, Bollani, Monica
Publikováno v:
In Materials Science in Semiconductor Processing May 2024 174
Autor:
Cantarella, Maria, Spanò, Vanessa, Zimbone, Massimo, Giuffrida, Federico, Lufrano, Ernestino, Strano, Vincenzina, Franzò, Giorgia, Sfuncia, Gianfranco, Nicotra, Giuseppe, Alberti, Alessandra, Buccheri, Maria Antonietta, Rappazzo, Giancarlo, Scalisi, Elena Maria, Pecoraro, Roberta, Brundo, Maria Violetta, Impellizzeri, Giuliana
Publikováno v:
In Materials Today Chemistry March 2024 36
Autor:
Sambri, Alessia, Scuderi, Mario, Guarino, Anita, Di Gennaro, Emiliano, Erlandsen, Ricci, Dahm, Rasmus T., Bjørlig, Anders V., Christensen, Dennis V., Di Capua, Roberto, Della Ventura, Bartolomeo, di Uccio, Umberto Scotti, Mirabella, Salvatore, Nicotra, Giuseppe, Spinella, Corrado, Jespersen, Thomas S., Granozio, Fabio Miletto
Publikováno v:
First published: 11 September 2020 on Advanced Functional Materials
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a dec
Externí odkaz:
http://arxiv.org/abs/2009.06900
Autor:
Fiorenza, Patrick, Iucolano, Ferdinando, Nicotra, Giuseppe, Bongiorno, Corrado, Deretzis, Ioannis, La Magna, Antonino, Giannazzo, Filippo, Saggio, Mario, Spinella, Corrado, Roccaforte, Fabrizio
Publikováno v:
Nanotechnology 29 (2018) 397502
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconduct
Externí odkaz:
http://arxiv.org/abs/2001.04712
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Nicotra Giuseppe, Spinella Corrado, Cosentino Salvatore, Mirabella Salvatore, Miritello Maria, Lo Savio Roberto, Simone Francesca, Terrasi Antonio
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 135 (2011)
Abstract The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum
Externí odkaz:
https://doaj.org/article/da5bcaea46124c9c8edcdade7b9b35c0