Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Nicole Wils"'
Autor:
Amanda Jane Leach, Nicole Wilson, Beth Arrowsmith, Jemima Beissbarth, Kim Mulholland, Mathuram Santosham, Paul John Torzillo, Peter McIntyre, Heidi Smith-Vaughan, Sue A Skull, Victor M Oguoma, Mark D Chatfield, Deborah Lehmann, Christopher G Brennan-Jones, Michael J Binks, Paul V Licciardi, Ross M Andrews, Tom Snelling, Vicki Krause, Jonathan Carapetis, Anne B Chang, Peter Stanley Morris
Publikováno v:
PLoS Medicine, Vol 21, Iss 6, p e1004375 (2024)
BackgroundIn Australian remote communities, First Nations children with otitis media (OM)-related hearing loss are disproportionately at risk of developmental delay and poor school performance, compared to those with normal hearing. Our objective was
Externí odkaz:
https://doaj.org/article/d30021904d204707b18794625973b47a
Autor:
M. Vroubel, Thanh Viet Dinh, L. F. Tiemeijer, M. Raucoules-aime, Hans Tuinhout, P. Grudowski, Ihor Brunets, B. W. C. Hovens, C. Ghidini, Nicole Wils, Guido T. Sasse, S. Dal Toso
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
High-voltage RF active and passive devices, including LDMOS, fringe capacitors, transformers and inductors with good RF performance, are required for building integrated RF power amplifiers at Watt-level in high-performance cost-effective RF front-en
Autor:
Jessica Hafetz, Catherine C. McDonald, D. Leann Long, Carol A. Ford, Thandwa Mdluli, Andrew Weiss, Jackson Felkins, Nicole Wilson, Bradley MacDonald
Publikováno v:
BMC Public Health, Vol 23, Iss 1, Pp 1-8 (2023)
Abstract Background The impact of young drivers’ motor vehicle crashes (MVC) is substantial, with young drivers constituting only 14% of the US population, but contributing to 30% of all fatal and nonfatal injuries due to MVCs and 35% ($25 billion)
Externí odkaz:
https://doaj.org/article/881a5c600fea44759380d0037393f34f
Autor:
Nicole Wils, Luis-Miguel Procel, B. Kaczer, Hans Tuinhout, Jacopo Franco, Felice Crupi, Lionel Trojman
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2015, 147, pp.72-74. ⟨10.1016/j.mee.2015.04.055⟩
Microelectronic Engineering, Elsevier, 2015, 147, pp.72-74. ⟨10.1016/j.mee.2015.04.055⟩
Display Omitted We report that Defect-Centric distribution can describe the channel hot carrier degradation.The analysis was done over 1000 samples in 45 and 65nm CMOS planar technologies.We study the variability of matching pair by using the Defect-
Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
this paper describes a set of ring oscillator test structures, with individually measurable static and dynamic supply currents, Nwell/Pwell leakage currents, and frequency. Purpose is to characterize frequency, leakage and aging and their variabiliti
Publikováno v:
International Journal of Hyperthermia, Vol 39, Iss 1, Pp 682-687 (2022)
Irreversible electroporation (IRE) ablation is gaining popularity over the last decade as a nonthermal alternative to thermal ablation technologies such as radiofrequency ablation (RFA) and Microwave ablation (MWA). This review serves as a practical
Externí odkaz:
https://doaj.org/article/db50570c41484abf8694ad06e43fece2
Autor:
Claudio Fiegna, Nicole Wils, Hans Tuinhout, Felice Crupi, Gino Giusi, Paolo Magnone, Pietro Andricciola, R. Jain
Publikováno v:
IEEE Transactions on Electron Devices. 58:2347-2353
This paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a larg
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:1687-1696
Systematic and random parametric mismatches are major performance limiters as well as notorious causes for redesigns of high precision mixed-signal circuits and systems. Therefore, it is extremely important to measure, analyze, interpret, model and d
Autor:
Ralf Pijper, Nicole Wils, Rob van Dalen, Joost Melai, Hans Tuinhout, P.H.C. Magnee, Ivo Pouwel, Pieter Weijs, Anurag Vohra, L. F. Tiemeijer, Ihor Brunets, Nicolae Cazana
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic bas
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
A test structure is presented that combines two types of full Kelvin matched resistor pairs in a single 12 pad process control compatible test line. Based on these structures, matching results of SiCr resistors in a BiCMOS RF technology are discussed