Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Nicole Bickel"'
Autor:
Eldad Bahat Treidel, Oliver Hilt, Veit Hoffmann, Frank Brunner, Nicole Bickel, Andreas Thies, Kornelius Tetzner, Hassan Gargouri, Christian Huber, Konstanty Donimirski, Joachim Wurfl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 215-228 (2021)
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature. The best performing devices, with a maximum
Externí odkaz:
https://doaj.org/article/c224af71832e40efa79c552bf05911a1
Autor:
Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl, Oliver Hilt
Publikováno v:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
The chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator capacitors are used to demonstrate a gate-first with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::741426412e63bcd4f17284d8b093ea59
https://doi.org/10.1088/1361-6641/aca42a
https://doi.org/10.1088/1361-6641/aca42a