Zobrazeno 1 - 10
of 262
pro vyhledávání: '"Nicole Ahner"'
Publikováno v:
Solid State Phenomena. 219:193-196
Porous ultra low constant materials (ULK) for isolation within the interconnect system of integrated circuits are a promising approach to reduce crosstalk and RC-delays due to shrinking feature sizes [1]. Due to their porosity and the integration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be11e0e9229a1993cb2678131c15ec7c
https://doi.org/10.4028/www.scientific.net/ssp.219.193
https://doi.org/10.4028/www.scientific.net/ssp.219.193
Publikováno v:
Microelectronic Engineering. 106:85-90
This paper investigates the influence of CH"4, NH"3, H"2 and He plasma on properties of porous low-k film and its effects on resisting moisture absorption during CMP and ions penetration from sputtering. It is found that the H"2, He, NH"3 plasma can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d270b1cb5d9a94b2bc1c79dee45378f
https://doi.org/10.1016/j.mee.2012.12.025
https://doi.org/10.1016/j.mee.2012.12.025
Publikováno v:
Solid State Phenomena. 195:110-113
The integration of porous ultra low dielectric constant materials (ULK) for isolation within the interconnect system of integrated circuits is a promising approach to reduce RC-delays and crosstalk due to shrinking feature sizes [1]. Actually the foc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aea63113db871432cf4bad8715950c68
https://doi.org/10.4028/www.scientific.net/ssp.195.110
https://doi.org/10.4028/www.scientific.net/ssp.195.110
Publikováno v:
Scopus-Elsevier
The integration of porous ultra low-k (ULK) materials within the interconnect system of integrated circuits is one of the most promising approaches to reduce RC-delay or crosstalk. The application of plasma processes for patterning, cleaning and phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb7eef2d5073459f5f1ea8c627854e6
https://doi.org/10.1016/j.mee.2011.04.021
https://doi.org/10.1016/j.mee.2011.04.021
Publikováno v:
Solid State Phenomena. 187:201-205
Wet chemical plasma etch residue removal is a promising alternative to low-k dielectric degrading plasma cleaning processes. With decreasing feature dimensions the wetting behavior of the liquid on low energetic surfaces present after dielectric patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37fc43099c711c7a650f257a75380a83
https://doi.org/10.4028/www.scientific.net/ssp.187.201
https://doi.org/10.4028/www.scientific.net/ssp.187.201
Autor:
Sven Zimmermann, Nicole Ahner, Thomas Gessner, Matthias Schaller, Norbert Lang, J Röpcke, Stefan E. Schulz, H. Rülke, H. Zimmermann, F. Blaschta
Publikováno v:
Microelectronic Engineering. 88:671-676
Reactive ion etch processes for modern interlevel dielectrics become more and more complex, especially for further scaling of interconnect dimensions. The materials will be damaged within such processes with the result of an increase in their dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f788945d5baf401a78abc220aaae0fb
https://doi.org/10.1016/j.mee.2010.07.001
https://doi.org/10.1016/j.mee.2010.07.001
Autor:
Nicole Ahner, Leonardo Meeus
Publikováno v:
Review of European Community & International Environmental Law. 20:91-100
Europe is tightening its climate change policy and with that its pollution control legislation, supposedly to lead the way towards a low carbon economy. As the rest of the world is lagging behind in greenhouse gas emission reduction efforts, this cau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f90f3ac57e24c7cb9d07e2a05b70e3e
https://doi.org/10.1111/j.1467-9388.2010.00695.x
https://doi.org/10.1111/j.1467-9388.2010.00695.x
Autor:
Stefan E. Schulz, H. Rülke, Nicole Ahner, Matthias Schaller, F. Blaschta, Sven Zimmermann, Thomas Gessner
Publikováno v:
Microelectronic Engineering. 87:337-342
The focus of this paper is the impact of CF"4 based plasma etch processes with the additives argon and C"4F"8 on material properties and geometrical parameters of etched trenches using dense and porous SiCOH. Argon and C"4F"8 were added to change the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e96f6bff33efb550eac119cac4edebd
https://doi.org/10.1016/j.mee.2009.08.004
https://doi.org/10.1016/j.mee.2009.08.004
Publikováno v:
Solid State Phenomena. :319-322
The removal of plasma etch residues by wet cleaning is an alternative or additional process to plasma processes, which are known to degrade low-k and ultralow-k dielectric materials. Besides Cu/low-k compatibility wetting is an important issue for we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6563f98e1269897d0575f23f88fcb4c
https://doi.org/10.4028/www.scientific.net/ssp.145-146.319
https://doi.org/10.4028/www.scientific.net/ssp.145-146.319
Publikováno v:
Microelectronic Engineering. 84:2606-2609
Looking onto integration of low-k materials within FEOL used processing temperatures in this field are much higher than within BEOL. In addition partly high aspect ratio features have to be filled without defects, e.g. within usage of spin-on low-k m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21e4c63620674706096d2014a8a7760
https://doi.org/10.1016/j.mee.2007.06.007
https://doi.org/10.1016/j.mee.2007.06.007