Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nicolas Wiedmann"'
Autor:
R. Poprawe, Jürgen Jandeleit, Dieter Hoffmann, Peter Loosen, Ernst Wolfgang Kreutz, Nicolas Wiedmann
Publikováno v:
Journal of Crystal Growth. 210:313-317
Defects and degradation of InGa(Al)As/GaAs DQW diode laser bars mounted on copper micro-channel heat sinks were investigated. The analytical techniques used are optical microscopy and scanning electron microscopy. The high-power diode lasers were inv
Autor:
R. Poprawe, Jürgen Jandeleit, Nicolas Wiedmann, G. Weimann, Rudolf Kiefer, G. Bihlmann, M. Ikulla
Publikováno v:
LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
The electrooptic characteristics, like threshold current I/sub th/ and differential quantum efficiency /spl eta//sub d/, of lnGaAs/AlGaAs quantum well lasers generally degrade with rising operating temperature. To ensure high output power and long li
Autor:
Guenter Weimann, Nicolas Wiedmann, Michael Mikulla, Joseph Rogg, Michael Dammann, Reinhart Poprawe, Franz Rinner, Helmer Konstanzer
Publikováno v:
SPIE Proceedings.
To study the influence of the carrier density on the lifetime of broad area high power diodes three different epitaxial structures (double and single quantum wells, different confinement factors) were investigated. The fabricated lasers have similar
Autor:
Nicolas Wiedmann, Franz Rinner, Martin Walther, Rudolf Kiefer, Guenter Weimann, Michael Mikulla, Marc T. Kelemen, Joseph Rogg
Publikováno v:
SPIE Proceedings.
Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low- cost fabrication is
Autor:
Reinhart Poprawe, Juergen Jandeleit, Rudolf Kiefer, Nicolas Wiedmann, Guenter Weimann, Michael Mikulla, G. Bihlmann
Publikováno v:
SPIE Proceedings.
InGaAs/AlGaAs large optical cavity (LOC) single quantum well (SQW) lasers emitting at 980nm were grown incorporating an AlGaAs/GaAs short-period superlattice layer next to the quantum well in order to improve the carrier confinement and thus high-tem
Publikováno v:
SPIE Proceedings.
High power diode lasers are mainly used for applications such as pumping of solid state lasers, direct material processing (i.e. welding, soldering, hardening, annealing) and printing. The outstanding characteristics of diode lasers are their compact
Autor:
R. Poprawe, Andreas Ostlender, Wolfgang Brandenburg, Nicolas Wiedmann, Peter Loosen, Juergen Jandeleit
Publikováno v:
SPIE Proceedings.
High power diode lasers can be used for a lot of applications such as pumping of solid state lasers, direct material processing (for example welding, soldering, annealing) and printing. The successful use of high power diode lasers depends on their h
Autor:
Nicolas Wiedmann, Reinhart Poprawe, Andreas Ostlender, Wolfgang Brandenburg, Peter Loosen, Juergen Jandeleit
Publikováno v:
SPIE Proceedings.
High power diode lasers can be used for a lot of applications such as pumping of solid state lasers, direct material processing and printing. The successful use of high power diode lasers depends on their high efficiency and reliability in combinatio
Publikováno v:
Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV.
The degradation of GaAlAs/GaAs laser diode bars mounted on copper micro channel heat sinks was investigated using optical microscopy, scanning electron microscopy and EDX- spectroscopy. The high power diode lasers were characterized before and after
Conference
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