Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nicolas Thivolle"'
Autor:
C. Monget, J. Decaunes, Bruno Perrin, Laurene Babaud, Olivier Fagart, Maxime Gatefait, Nicolas Thivolle, Mathieu Guerabsi, Jean-Damien Chapon, Robin Perrier, Alice Pelletier, Benjamin Duclaux
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
I.IntroductionWith overlay requirements getting more and more critical, a lot of work has been done in the industry to improve the overlay correction capability by using high order process corrections, corrections per exposure and heating control (le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c8c51f4747c3aebf113d0dd883746d
https://doi.org/10.1109/asmc.2019.8791771
https://doi.org/10.1109/asmc.2019.8791771
Autor:
Carlo Pogliani, Andrea Galbiati, Charles Crawford, Frank Sundermann, Nicolas Thivolle, Trent Hutchinson, Laurent Lecarpentier, Félix Dufaye
Publikováno v:
SPIE Proceedings.
Chrome migration or aging phenomenon is known for 193nm binary photomasks since a few years. 193nm irradiations and time generate an oxide growth on chrome sidewalls and then cause a non-uniform increase of critical dimensions (CD) [1], [2], [3, [4].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0454b3938ad7f5eddfe0d788e2039ba9
https://doi.org/10.1117/12.2257059
https://doi.org/10.1117/12.2257059
Autor:
Christophe Brochard, Carlo Pogliani, Nicolas Thivolle, Luca Sartelli, Stuart Gough, Félix Dufaye, Hiroyuki Miyashita, Yoshioka Hidenori, Frank Sundermann, Nathalie Charras
Publikováno v:
SPIE Proceedings.
193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long period. These 193nm binary masks seem to be well-known but recent studies ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4159d5bbe300c2e6b455bdf093bf6b51
https://doi.org/10.1117/12.898867
https://doi.org/10.1117/12.898867
Autor:
Lionel Thevenon, Jean Damien Chapon, Marianne Decaux, Mark Joyner, Avi Cohen, Nicolas Cluet, Fabrice Baron, Bertrand Borot, Frank Sundermann, Erez Graitzer, K. Dabertrand, Bertrand Le Gratiet, Yoann Blancquaert, Raphael Bingert, Pascal Gourard, Alain Ostrovsky, Laurene Babaud, Benedicte Bry, C. Monget, Ute Buttgereit, Jean Massin, Robert Birkner, Thierry Devoivre, Nicolas Thivolle
Publikováno v:
SPIE Proceedings.
Since 2008, we have been presenting some papers regarding CMOS 45nm logic gate patterning activity to reduce CD dispersion. After a global CD budget evaluation at SPIE08 [1], we have been focusing on Intrafield CD corrections using Dose Mapper[2].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b3cfd42306ebd56a82512b0952db53
https://doi.org/10.1117/12.845987
https://doi.org/10.1117/12.845987
Autor:
Lionel Thevenon, Alain Ostrovski, Marianne Decaux, Fabrice Baron, Nicolas Thivolle, Pascal Gouraud, Bertrand Le Gratiet, Jean-Damien Chapon, Romuald Faure, Boris VandeWalle, Laurene Babaud, K. Dabertrand, C. Monget, Frank Sundermann, Nicolas Cluet, Jean Massin
Publikováno v:
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII, 2009, pp.72722-32
Proceedings of the SPIE-The International Society for Optical Engineering, Metrology, Inspection, and Process Control for Microlithography XXIII, 2009, pp.72722-32
CMOS 45nm technology, and especially the logic gate patterning has led us to hunt for every nanometer we could found to reach aggressive targets in term of overall CD budget. We have presented last year a paper ("Process Control for 45 nm CMOS logic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7976b5b86c48f540fb4cef5a80561c2e
https://doi.org/10.1117/12.812571
https://doi.org/10.1117/12.812571