Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nicolas Sousbie"'
Publikováno v:
ECS Transactions. 3:79-90
Direct wafer bonding is a generic technology enabling the fabrication of innovative structures. Adequate surface treatments allow bonding of virgin as well as partially or fully processed wafers, leading to new Anti-sticking BSOI, Patterned BSOI and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f979163e649545fd252e7d6baa325ae
https://doi.org/10.1149/1.2357057
https://doi.org/10.1149/1.2357057
Autor:
François Rieutord, Aurélie Tauzin, Frédéric Mazen, Luciana Capello, Fabrice Letertre, Nicolas Sousbie
Publikováno v:
ECS Transactions. 3:119-127
We have investigated the effects of hydrogen implantation in silicon wafers by x-ray scattering methods. Different crystalline orientations for the Si single crystals were studied, namely (100), (110) and (111) Si. Large strains normal to the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::328ca354edae01d762bbdda3880659dc
https://doi.org/10.1149/1.2357061
https://doi.org/10.1149/1.2357061
Autor:
Phuong Nguyen, K. K. Bourdelle, N. Rochat, Lionel Portigliatti, Alice Boussagol, Thibaut Maurice, Aurélie Tauzin, Nicolas Sousbie, Fabrice Letertre, X. Hebras
Publikováno v:
Journal of Applied Physics. 101:033506
In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::def93c0c63fbd5a30d2b113ff74b250f
https://doi.org/10.1063/1.2432380
https://doi.org/10.1063/1.2432380
Publikováno v:
Journal of Applied Physics. 99:103509
The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8d66a94b6a82cc6f2c657d8c090388
https://doi.org/10.1063/1.2198928
https://doi.org/10.1063/1.2198928