Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Nicolas Posseme"'
Autor:
Thierry Chevolleau, M. Bonvalot, Nicolas Posseme, Moustapha Jaffal, R. Gassilloud, C. Mannequin, Christophe Vallée
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(2)
Area Selective Deposition (ASD) is a bottom-up process leading to a uniform deposit in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever the strategy used to develop a selective deposi
Autor:
François Boulard, Vincent Gros, Christophe Porzier, Laurent Brunet, Valérie Lapras, Frank Fournel, Delphine Truffier-Boutry, Delphine Autillo, Patrick Ruault, Moty Keovisai, Nicolas Posseme
Publikováno v:
Microelectronic Engineering. 265:111875
Autor:
Gauthier Lefevre, Nicolas Posseme, Taguhi Yeghoyan, Moustapha Jaffal, Christophe Vallée, M. Bonvalot, R. Gassilloud
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩
Journal of Vacuum Science & Technology A, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2021, 39 (3), pp.030402. ⟨10.1116/6.0000969⟩
In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures. A proof of concept is provided for the TSD of Ta2O5. The TSD process relies on plasma-enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0242e9c63cb4da471e2932ed90ec2a0
https://hal.univ-grenoble-alpes.fr/hal-03180749
https://hal.univ-grenoble-alpes.fr/hal-03180749
Autor:
Christophe Navarro, Nicolas Posseme, Maxime Argoud, Maria Gabriela Gusmão Cacho, Charlotte Bouet, Patricia Pimenta-Barros, Khatia Benotmane, Raluca Tiron, Guido Rademaker
Publikováno v:
Journal of Vacuum Science & Technology B
Directed self-assembly (DSA) of block copolymers (BCPs) is an advanced patterning technique being investigated to obtain small and dense patterns for future technological nodes. In order to demonstrate the potential of DSA to extend optical lithograp
Autor:
Taguhi Yeghoyan, M. Bonvalot, Nicolas Posseme, Christophe Vallée, Moustapha Jaffal, Thierry Chevolleau, R. Gassilloud
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning X (SPIE) 2021
Advanced Etch Technology and Process Integration for Nanopatterning X (SPIE) 2021, 2021, conference virtuelle, France
Advanced Etch Technology and Process Integration for Nanopatterning X (SPIE) 2021, 2021, conference virtuelle, France
3D and nanoscale dimensions make patterning extremely difficult to perform. In the past, patterning via plasma etching was a success thanks to the very good capacity of this process to etch one preferential material over the others: selective etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c4443d01b6c20282a8229562fda43a4
https://hal.univ-grenoble-alpes.fr/hal-03449527
https://hal.univ-grenoble-alpes.fr/hal-03449527
Autor:
Raluca Tiron, Christophe Navarro, Maxime Argoud, Kaumba Sakavuyi, Maria Gabriela Gusmão Cacho, Patricia Pimenta-Barros, Nicolas Posseme
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2020, 230, pp.111369-. ⟨10.1016/j.mee.2020.111369⟩
Microelectronic Engineering, 2020, 230, pp.111369-. ⟨10.1016/j.mee.2020.111369⟩
Microelectronic Engineering, Elsevier, 2020, 230, pp.111369-. ⟨10.1016/j.mee.2020.111369⟩
Microelectronic Engineering, 2020, 230, pp.111369-. ⟨10.1016/j.mee.2020.111369⟩
Directed Self-Assembly of block copolymers is a lithographic technique being developed to reach sub-10 nm technological nodes. Recently, high chi block copolymers have been developed to achieve higher resolution. In this paper, the high chi system in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1130106bbbf1f2a670534436693df35c
https://hal.archives-ouvertes.fr/hal-03490365
https://hal.archives-ouvertes.fr/hal-03490365
Autor:
Taguhi Yeghoyan, Samia Belahcen, Moustapha Jaffal, Ahmad Bsiesy, Agnès Granier, Nicolas Posseme, Rémi Vallat, R. Gassilloud, M. Bonvalot, Christophe Vallée, Gautier Lefèvre, Sylvain David, Ahmad Chaker
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2020, 38 (3), pp.033007. ⟨10.1116/1.5140841⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.033007. ⟨10.1116/1.5140841⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2020, 38 (3), pp.033007. ⟨10.1116/1.5140841⟩
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.033007. ⟨10.1116/1.5140841⟩
In this paper, the emerging role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John Coburn, who studied the role of ionic species in plasma etching processes forty years ago.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::432e4b176ef98039ba115c491e2d3c1e
https://hal.archives-ouvertes.fr/hal-02586207
https://hal.archives-ouvertes.fr/hal-02586207
Autor:
Nicolas Posseme, Sylvain Joblot, Cécile Jenny, Denis Guiheux, Alain Campo, Erwine Pargon, Marion Croisy, C. Richard
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, Elsevier, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
Microelectronic Engineering, 2018, 194, pp.25-30. ⟨10.1016/j.mee.2018.03.001⟩
International audience; Dry strip processes performed after implantation steps have to remove efficiently the photoresist mask protecting the non-implanted area without leaving any defects on the substrate. In this study bubble-like defects called bl
Publikováno v:
Journal of Vacuum Science & Technology B. 39:063201
The influence of chemical parameters on electrical degradation in an AlGaN/GaN heterostructure was investigated in order to improve performance in metal-oxide-semiconductor high-electron mobility transistor devices. We first examined the influence of
Publikováno v:
Microelectronic Engineering. 249:111619
During the fabrication of a MOS-HEMT, the plasma-etching steps are critical because they can damage the GaN materials and lead to electrical degradation effects. To address these limitations, we studied the influence of plasma parameters on electrica