Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Nicolas Pauc"'
Autor:
Alban Gassenq, Ivan Duchemin, Yann-Michel Niquet, Alain Gliere, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 1, Pp 1-4 (2022)
High tensile strained Ge cavities in crossbeam are promising for the development of integrated laser sources on Si. However, the optimization of such cavities remains more challenging than the uniaxial beams. Indeed, the spatial distributions of both
Externí odkaz:
https://doaj.org/article/44425849f50447c496f813a9512436a4
Autor:
Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a num
Externí odkaz:
https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
Autor:
Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li, Shui-Qing Yu
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
A silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened up a completely new approach that is different from the traditional III-V integration on Si. In this study, high
Externí odkaz:
https://doaj.org/article/523a72001c304765b62e7efab093c99b
Autor:
Luong, Minh Anh, Eric, Robin, Nicolas, Pauc, Pascal, Gentile, Thierry, Baron, Bassem, Salem, Masiar, Sistani, Alois, Lugstein, Maria, Spies, Bruno, Fernandez, Hertog, M. den
While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopant atoms into the
Externí odkaz:
http://arxiv.org/abs/2002.02373
Autor:
Marvin Frauenrath, Lara Casiez, Omar Concepción Díaz, Nicolas Coudurier, Nicolas Gauthier, Sidi-Mohammed N'hari, Emmanuel Nolot, Philippe Rodriguez, Dan Buca, Nicolas Pauc, Vincent Reboud, Jean-Michel Hartmann
Publikováno v:
ECS Transactions. 109:3-19
Dopant concentrations higher than 1x1019 cm-3 are required to improve the performances of various GeSn based devices such as photodetectors, electrically pumped lasers and so on. In this study, the in-situ Boron and Phosphorous doping of SiGeSn was i
Autor:
Moustafa El Kurdi, Andjelika Bjelajac, Maksym Gromovyi, Emilie Sakat, Zoran Ikonic, Vincent Reboud, Alexei Chelnokov, Nicolas Pauc, Vincent Calvo, Jean-Michel Hartmann, Dan Buca
Publikováno v:
Silicon Photonics XVIII.
Autor:
Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Frederic Boeuf, Jérémie Chrétien, Julien Chaste, Vincent Calvo, Alexei Chelnokov, Moustafa El Kurdi, Marvin Frauenrath, Vincent Reboud, Maksym Gromovyi, Andjelika Bjelajac, Binbin Wang, Gilles Patriarche, Etienne Herth, Philippe Boucaud
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of li
Autor:
Clément Cardoux, Lara Casiez, Nicolas Pauc, Vincent Calvo, Nicolas Coudurier, Philippe Rodriguez, Jérôme Richy, Pierre Barritault, Olivier Lartigue, Christophe Constancias, Marvin Frauenrath, Jean-Michel Hartmann, Alexei Chelnokov, Olivier Gravrand, Vincent Reboud
Publikováno v:
Silicon Photonics XVII.
Autor:
Thierry Baron, Bruno Fernandez, Masiar Sistani, Eric Robin, Nicolas Pauc, Maria Spies, Bassem Salem, Minh Anh Luong, Alois Lugstein, Martien Den Hertog, Pascal Gentile
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, 2020, 3 (10), pp.10427-10436. ⟨10.1021/acsanm.0c02303⟩
ACS Applied Nano Materials, American Chemical Society, 2020, 3 (10), pp.10427-10436. ⟨10.1021/acsanm.0c02303⟩
ACS Applied Nano Materials, 2020, 3 (10), pp.10427-10436. ⟨10.1021/acsanm.0c02303⟩
ACS Applied Nano Materials, American Chemical Society, 2020, 3 (10), pp.10427-10436. ⟨10.1021/acsanm.0c02303⟩
International audience; While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a widely known concept, used among others to injec
Autor:
Binbin Wang, Konstantinos Pantzas, Philippe Boucaud, Vincent Calvo, Jérémie Chrétien, Isabelle Sagnes, Jean-Michel Hartmann, Frederic Boeuf, Sébastien Sauvage, Xavier Checoury, Etienne Herth, Detlev Grützmacher, Dan Buca, Nils von den Driesch, Anas Elbaz, Alexei Chelnokov, Moustafa El Kurdi, Vincent Reboud, Gilles Patriarche, Nicolas Pauc, Emilie Sakat
Publikováno v:
ECS Transactions. 98:61-68
Recent achievements of direct band gap with germanium by alloying with tin or by tensile strain engineering has enabled multiple times demonstration of laser emission in the 2-4µm wavelength range. This fast and promising emergence of CMOS-compatibl