Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nicolas Humblot"'
Autor:
Elias Z. Stutz, Qihua Xiong, Mahdi Zamani, Roland E. Logé, Simon Escobar Steinvall, Nicolas Humblot, Cyril Cayron, Anna Fontcuberta i Morral, Andrés Granados del Águila, Rajrupa Paul, Jean-Baptiste Leran, Shreyas S. Joglekar
Publikováno v:
Crystal Growth & Design. 20:3816-3825
Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelect...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4722ef2253241edf089104708379e175
https://doi.org/10.1021/acs.cgd.0c00125
https://doi.org/10.1021/acs.cgd.0c00125
Autor:
Andreas Schüler, Andrea Giunto, Luc Burnier, Anna Krammer, Nicolas Humblot, Anna Fontcuberta i Morral
Publikováno v:
2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen diluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::617dcabe7387a7c1dfee5108b0d79f07
https://doi.org/10.1109/sum48678.2020.9161032
https://doi.org/10.1109/sum48678.2020.9161032
Autor:
Xinyun Liu, Andrea Giunto, Jake D. Hutchinson, Nicolas Humblot, Djamshid Damry, Rebecca L. Milot, Anna Fontcuberta i Morral, Jessica Boland
The employment of other group IV materials, such as alloys of germanium and tin, poses a solution for overcoming the efficiency limit of silicon that arises from its indirect bandgap. By using THz spectroscopy, the optoelectronic properties, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf6aa6cbcda2228a1d0c854ec647fd86
https://infoscience.epfl.ch/record/298672
https://infoscience.epfl.ch/record/298672
