Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nicolas Heuck"'
Integrierte Schaltungen sind die Schlüsselkomponenten der modernen Elektronik; jeder Computer und nahezu jedes elektrische Gerät werden erst durch den Einsatz der auf einem Silizium-Chip zusammengefassten Schaltungsstrukturen ermöglicht. Es ist Zi
Autor:
Carsten Schäffer, Frank Umbach, Nicolas Heuck, Holger Schulze, Martin Kerber, Daniel Bolowski, Karsten Guth, Frank Hille, Alexander Ciliox, Roman Roth, K. Rott
Publikováno v:
Microelectronics Reliability. 64:393-402
The introduction of thick copper metallization and topside interconnects as well as a superior die attach technology is improving the performance and reliability of IGBT power transistor technologies significantly. The much higher specific heat capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40542cd70c27a59476792e683193e9e6
https://doi.org/10.1016/j.microrel.2016.07.119
https://doi.org/10.1016/j.microrel.2016.07.119
Publikováno v:
Materials Science Forum. 858:1043-1048
Packaging plays an important role to allow the full potential of silicon carbide devices to be realised. The physical properties of silicon carbide will allow devices to operate with junction temperatures well above 200 °C, but today standard-packag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662d19a7c01e399ac8ec69ebb44034b0
https://doi.org/10.4028/www.scientific.net/msf.858.1043
https://doi.org/10.4028/www.scientific.net/msf.858.1043
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
The point of highest mechanical load in an interconnect layer, where crack propagation will start, depends strongly on geometry and material of the attached die as it was already indicated by the CIPS08 lifetime model for insulated models [1]. Theref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499bbc3a3896ed51392a2c0f85d4d69c
https://doi.org/10.1109/epe.2015.7311765
https://doi.org/10.1109/epe.2015.7311765
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Several novel packaging technologies for power modules have been recently introduced to meet the future requirements of higher reliability and temperature stability. Using copper wire bonds for the top-side interconnect and silver sintered or diffusi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05bd6d64639fe5568d597100003d30af
https://doi.org/10.1109/ispsd.2015.7123454
https://doi.org/10.1109/ispsd.2015.7123454